• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

2007 Fiscal Year Final Research Report Summary

Development of deep UV light emitting devices using nano-technology and the application

Research Project

Project/Area Number 15GS0207
Research Category

Grant-in-Aid for Creative Scientific Research

Allocation TypeSingle-year Grants
Research InstitutionRitsumeikan University (2007)
Tokyo Institute of Technology (2003-2006)

Principal Investigator

AOYAGI Yoshinobu  Ritsumeikan University, Center for Promotion of the COE Program, Professor (70087469)

Co-Investigator(Kenkyū-buntansha) TAKEUCHI Misaichi  Riken Institute, Nano-science Research Program, Researcher (60284585)
INOUE Shinnichiro  Kyushu University, Institute of Materials Chemistry and Engineering, Assistant Professor (20391865)
HIRAYAMA Hideki  Riken Institute, Tera-Hertz Quantum Device Group, Team Leader (70270593)
MATSUMOTO Yuji  Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, Associate Professor (60302981)
KOINUMA Hideomi  The University of Tokyo, Graduate School of Frontier Science, Professor (70011187)
Project Period (FY) 2003 – 2007
Keywordsdeep UV LED / two light beam in-situ monitoring system / vertical type Deep UV LED / hetero nonlinear photonic crystal / anti-surfactant method / flax crystal growth technique / boron oxide material / temperature modulation technique
Research Abstract

In this project we have proposed several new technologies on development of solid state high power deep UV (DUV) light emitting devices (LEDs), which could essentially solve a lot of environmental problems concerned by many people nowadays, and have proven the real possibility of our proposal toward the high power DUV light emitting devices. Epitaxial crystal growth procedures have fundamentally been clarified by some scientific approaches. Highly-doping technologies for p-type widegap semiconductors and highly-efficient nonlinear photonic crystals have been developed. Our results are as follows:
1.Epitaxial growth mechanism of A1GaN-based materials and hetero structures has scientifically been revealed by a newly developed in-situ monitoring system instead of previous experiential approach.
2.Development of vertical-type DUV LEDs emitting at 280 nm has been succeeded, which promise future high-power operation.
3.InAlGaN quantum dot DUV LEDs have firstly been operated at 355nm.
4.Extremely enhanced SHG has been generated by newly developed hetero nonlinear photonic crystals. The efficiency was more than 300 times compared with balk nonlinear materials. DUV laser was operated at 325 nm by this technology.
5.Epitaxial growth of new nonlinear-photonic-crystal thin films (RECa4O(BO3)3RECOB) has been succeeded by flax crystal growth technique.
6.P-type doping of ZnO materials has been accomplished by introducing growth temperature modulation with combinatorial technique.
These results are published in about 50 original papers and presented in international conference of more than 65 including 8 invited papers. About 75 papers are presented in domestic conference. Patents obtained or required are 13. Typical examples for each are listed in following sheets

  • Research Products

    (125 results)

All 2008 2007 2006 2005 2004 2003

All Journal Article (82 results) (of which Peer Reviewed: 53 results) Presentation (26 results) Book (6 results) Patent(Industrial Property Rights) (11 results) (of which Overseas: 2 results)

  • [Journal Article] Excitation-Density Dependence of Photoluminescence from 3i-dopedAIGaN/AIGaN Multiple Quantum Wells at Low Temperature2008

    • Author(s)
      R.Kajitani
    • Journal Title

      Jpn.J.Appl.Pbys. 47

      Pages: 47-50

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] First Operation of AIGaN Channel High Electron Mobility Transistors2008

    • Author(s)
      T.Nanjo
    • Journal Title

      Appl.Phys.Express 1

      Pages: 011101-1-011101-3

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Improvement of Al-Polar AIN Layer Quality by Three-StageFlow-Modulation Metalorganic Chemical Vapor Deposition2008

    • Author(s)
      M.Takeuchi
    • Journal Title

      Appl.Phys.Express 1

      Pages: 021102-1-021102-3

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Direct determination of photonic band structure for waveguiding modes intwo-dimensional photonic crystals2008

    • Author(s)
      S.Inoue
    • Journal Title

      Optics Express 16

      Pages: 2461-2468

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Quaternary InAIGaN quantum-dot ultraviolet light-emitting diode emitting at 335 nm fabricated by an anti-surfactant method2008

    • Author(s)
      H.Hirayama
    • Journal Title

      Physica Status Solidi(c) 5

      Pages: 2312-2315

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Excitation-Density Dependence of Photo-luminescence from Si-doped AIGaN/GaN Multiple Quantum Wells at Low Temperature2008

    • Author(s)
      R. Kajitani
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 47-501

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] First Operation of AIGaN Channel High Electron Mobility Transistors2008

    • Author(s)
      T. Nanjo
    • Journal Title

      Appl. Phys. Express 1

      Pages: 011101, 1-3

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Improvement of Al-Polar MN Layer Quality by Three-Stage Flow-Modulation Metalorganic Chemical Vapor Deposition2008

    • Author(s)
      M. Takeuchi
    • Journal Title

      Appl. Phys. Express 1

      Pages: 021102, 1-3

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Direct determination of photonic band structure for waveguiding modes in two-dimensional photonic crystals2008

    • Author(s)
      S. Inoue
    • Journal Title

      Optics Express 16

      Pages: 2461-2468

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Quaternary InAIGaN quantum-dot ultraviolet light-emitting diode emitting at 335 nm fabricated by an anti-surfactant method2008

    • Author(s)
      H. Hirayama
    • Journal Title

      Physica Status Solidi(a) (in press)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Barrier-height and well-width dependence of photoluminescence from AIGaN-based quantum well structures for deep-UV emitters2007

    • Author(s)
      R.Kajitani
    • Journal Title

      Materials Science&Engineering B 139

      Pages: 186-191

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Al-and N-polar AIN layers grown on c-plane sapphire substrates bymodified flow-modulation MOCVD2007

    • Author(s)
      M.Takeuchi
    • Journal Title

      J.Crystal Growth 305

      Pages: 360-365

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Polarity dependence of AIN{0001}decomposition in flowing H_22007

    • Author(s)
      Y.Kumagai
    • Journal Title

      J.Crystal Growth 305

      Pages: 366-371

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] TEM analysis of an interface layer by the anti-surfactant treatment on a GaN template2007

    • Author(s)
      N.Kuwano
    • Journal Title

      J.Crystal Growth 298

      Pages: 284-287

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Improvement of crystalline quality of N-polar AIN layers on c-planesapphire by low-pressure flow-modulated MOCVD2007

    • Author(s)
      M.Takeuchi
    • Journal Title

      J.Crystal Growth 298

      Pages: 336-340

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Defect-free two-dimensional-photonic crystal structures on a nonlinearoptical polymer patterned by nanoimprint lithography2007

    • Author(s)
      M.Okinaka
    • Journal Title

      J.Vac.Sci.Technol B25

      Pages: 899-901

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] フラックスエピタキシー法を用いたScAlMgO_4薄膜成長2007

    • Author(s)
      石井 誉
    • Journal Title

      Journal of Flux Growth 2

      Pages: 75-75

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Barrier-height and well-width dependence of photoluminescence from AIGaN-based quantum well structures for deep-UV emitters2007

    • Author(s)
      R. Kajitani
    • Journal Title

      Materials Science & Engineering B 139

      Pages: 186-191

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Al- and N-polar A1N layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD2007

    • Author(s)
      M. Takeuchi
    • Journal Title

      Crystal Growth 305

      Pages: 360-365

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] TEM analysis of an interface layer formed by the anti-surfactant treatment on a GaN template2007

    • Author(s)
      N. Kuwano
    • Journal Title

      J. Crystal Growth 298

      Pages: 284-287

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Improvement of crystalline quality of N-polar MN layers on c-plane sapphire by low-pressure flow-modulated MOCVD2007

    • Author(s)
      M. Takeuchi
    • Journal Title

      J. Crystal. Growth 298

      Pages: 336-340

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Defect-free two-dimensional-photonic crystal structures on a nonlinear optical polymer patterned by nanoimprint lithography2007

    • Author(s)
      M. Okinaka
    • Journal Title

      J. Vac. Sci. Technol., B 25

      Pages: 899-901

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Fabrication of GaN-based striped structures along the<11-20>direction bythe combination of RIE dry-etching and KOH wet-etching techniques torecover dam-etching damage2006

    • Author(s)
      M.Itoh
    • Journal Title

      Phys.Stat.Sol.(c) 3

      Pages: 1624-1628

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Straight and Smooth Etching of GaN(1-100)Plane by Combination ofReactive Ion Etching and KOH Wet Etching Techniques2006

    • Author(s)
      M.Itoh
    • Journal Title

      Jpn.J.Appl.Phys. 45

      Pages: 3988-3991

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] TEM analysis of annihilation process of threading dislocations in GaN thinfilms grown by MOVPE with anti-surfactant treatment2006

    • Author(s)
      M.Hijikuro
    • Journal Title

      Phys.Stat.Sol.(c) 3

      Pages: 1832-1835

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Vertical AIGaN deep ultraviolet light a mitting diode emitting at 322 nmfabricated by the laser lift-off technique2006

    • Author(s)
      K.Kawasaki
    • Journal Title

      Appl.Phys.Lett. 89

      Pages: 261114-261116

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] 深紫外窒化物系発光デバイス2006

    • Author(s)
      川崎 宏治
    • Journal Title

      光学 35

      Pages: 264-253

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Ultraviolet second-harmonic generation and sum-frequency mixing in atwo-dimensional nonlinear optical polymer photonic crystal2006

    • Author(s)
      S.Inoue
    • Journal Title

      Jpn.J.Appl.Phys. 45

      Pages: 6103-6107

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Nonlinear optical polymer patterned by nanoimprint lithography as aphotonic crystal waveguide structure2006

    • Author(s)
      M.Okinaka
    • Journal Title

      J.Vac.Sci.Technol. B24

      Pages: 271-273

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Investigation of defects in GaNwith varying Mg doping concentrations2006

    • Author(s)
      T.Obata
    • Journal Title

      Phys.Stat.Sol.(c) 3

      Pages: 1775-1778

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Combinatorial Experimentation and Materials Informatics2006

    • Author(s)
      I.Takeuchi
    • Journal Title

      MRS Bulletin 31

      Pages: 999-1003

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] A combinatorial approach to the discover and opimization of YCa_4O(BO_3)_3-basead liminsescent materials2006

    • Author(s)
      H.Sano
    • Journal Title

      Appl.Surf.Sci. 252

      Pages: 2493-2496

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Shifting donor-acceptor photoluminescence in N-doped ZnO2006

    • Author(s)
      T.Makino
    • Journal Title

      J.Physical Society of Japan 75

      Pages: 073701-1-073701-4

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] '光学設計2006

    • Author(s)
      青柳 克信
    • Journal Title

      情報機構

      Pages: 455-465

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Fabrication of GaN-based striped structres along the<11-20> direction by the combination of RIE dry-etching and KOH wet-etching techniques to recover dry-etching damage2006

    • Author(s)
      M. Itoh
    • Journal Title

      Phys. Stat. Sol.(c) 3

      Pages: 1624-1628

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Straight and Smooth Etching of GaN(1-100) Plane by Combination of Reactive Ion Etching and KOH Wet Etching Techniques2006

    • Author(s)
      M. Itoh
    • Journal Title

      Jpn. J. Appl. Phys. 45

      Pages: 3988-3991

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] TEM analysis optannihilation process or threading dislocations in GaN thin films grown by MOVPE with anti-surfactant treatment2006

    • Author(s)
      M. Hijikuro
    • Journal Title

      Phys. Stat. Sol.(c) 3

      Pages: 1832-1835

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Vertical AlGaN deep ultraviolet light emitting diode emitting at 322nm fabricated by the laser lift-off technique2006

    • Author(s)
      K. Kawasaki
    • Journal Title

      Appl. Phys. Lett. 89

      Pages: 261114

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Ultraviolet second-harmonic generation and sum-frequency mixing in a two-dimensional nonlinear optical polymer photonic crystal2006

    • Author(s)
      S. Inoue
    • Journal Title

      Jpn. J. Appl. Phys. 45(Special Issue)

      Pages: 6103-6107

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Nonlinear optical polymer patterned by nanoimprint lithography as a photonic crystal waveguide structure2006

    • Author(s)
      M. Okinaka
    • Journal Title

      J. Vac. Sci. Technol. B 24

      Pages: 271-273

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Investigation of defects in GaN with varying Mg doping concentrations2006

    • Author(s)
      T. Obata
    • Journal Title

      Phys. Stat. Sol.(c) 3

      Pages: 1775-1778

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Combinatorial Experimentation and Materials Informatics2006

    • Author(s)
      I. Takeuchi
    • Journal Title

      MRS Bulletin. 31

      Pages: 999-1003

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] A combinatorial approach to the discovery and optimization of RECa_4O(BO_3)_3-based luminescent matPrialc2006

    • Author(s)
      H. Sano
    • Journal Title

      Appl. Surf. Sci. 252

      Pages: 2493-2496

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Shifting donor-acceptor photoluminescence in N-doped ZnO2006

    • Author(s)
      T. Makino
    • Journal Title

      J. Phys. Soc. Jpn 75

      Pages: 073701-1-4

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Local photocurrent detection on InAs wires by conductive AFM2005

    • Author(s)
      H.Masuda
    • Journal Title

      Ultramicroscopy 105

      Pages: 137-142

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Design and fabrication of two-dimensional photonic crystals withpredetermined nonlinear optical properties2005

    • Author(s)
      S.Inoue
    • Journal Title

      Phys.Rev.Lett 94

      Pages: 103904-1-103904-4

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Fabrication of nonlinear photonic crystals and their applications(Invited Paper)2005

    • Author(s)
      S.Inoue
    • Journal Title

      Proc.SPIE Int.Soc.Opt.Eng. 5732

      Pages: 438-448

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Quaternary InAlGaN-based high-efficiency ultraviolet light-emittingdiodes2005

    • Author(s)
      H.Hirayama
    • Journal Title

      J.Appl.Phys. 97

      Pages: 091101-1-091101-19

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] RECa_40(BO3_)_3 thin films as new Luminescent materials screened by the combinatorial method2005

    • Author(s)
      H.Sano
    • Journal Title

      J.of Phys.and Chem.of Solids 66

      Pages: 2112-2115

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Computer Design of Combinatorial Shadow Mask for Ternary CompositionトSpread Library2005

    • Author(s)
      R.Takahashi
    • Journal Title

      Meas.Sci.Technol 16

      Pages: 292-295

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Y_<1-x>EuxCa4O(BO_3)_3 thin film as a luminescent material screened by the combinatorial method2005

    • Author(s)
      H.Sano
    • Journal Title

      Appl.Phys.Lett. 86

      Pages: 021104-021106

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Repeated temperature modulation epitaxy for p-type dopingand light-emitting diode based on ZnO2005

    • Author(s)
      A.Tsukazaki
    • Journal Title

      Nature Materials 4

      Pages: 42-46

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] 'LED最新技術動向〜性能向上、課題解決集〜、第5章、紫外LEDの短波長化と高効率化の課題と展望2005

    • Author(s)
      平山 秀樹
    • Journal Title

      情報機構

      Pages: 91-104

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Local photocurrent detection on InAs wires by conductive AFM2005

    • Author(s)
      H. Masuda
    • Journal Title

      Ultramicroscopy 105

      Pages: 137-142

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Design and fabrication of two-dimensional photonic crystals with predetermined nonlinear optical properties2005

    • Author(s)
      S. Inoue
    • Journal Title

      Phys. Rev. Lett. 94

      Pages: 103904 1-4

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Fabrication of nonlinear photonic crystals and their applications(Invited Paper)2005

    • Author(s)
      S. Inoue
    • Journal Title

      Proc. SPIE Int. Soc. Opt. Eng. 5732

      Pages: 438-448

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] ナノテクノロジーと深紫外発光素子の開発2004

    • Author(s)
      青柳 克信
    • Journal Title

      固体物理 39

      Pages: 265-278

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Photonic band structure and related properties of photonic crystalwaveguides in nonlinear optical polymers with metallic cladding2004

    • Author(s)
      S.Inoue
    • Journal Title

      Phys.Rev. B69

      Pages: 205109-1-205109-6

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Growth and Annealing Condition of high Al Content p-type AlGaN fordeep UV-LEDs2004

    • Author(s)
      T.Obata
    • Journal Title

      Phys, Stat.Sol.(a) 201

      Pages: 2803-2807

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Quaternary InAlGaN based deep UV LED with high-Al-content P-type AlGaN2004

    • Author(s)
      H.Hirayama
    • Journal Title

      Proc.SPIE Int.Soc.Opt.Eng. 5359

      Pages: 422-433

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] InAlGaN4元混晶を用いた紫外LEDの短波長化と高出力化2004

    • Author(s)
      平山 秀樹
    • Journal Title

      レーザー研究(「短波長LED・LD、紫外のLED」特集号) 32

      Pages: 402-409

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures2004

    • Author(s)
      S.Anceau
    • Journal Title

      Phys.Stat.Sol.(a) 201

      Pages: 190-194

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Combinatorial synthesis and luminescent characteristics of RECa40(BO3)3 epitaxial thin films2004

    • Author(s)
      H.Kubota
    • Journal Title

      Appl.Surf.Sci 223

      Pages: 241-244

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Development of a new combinatorial mask for addressable ternary phase diagramming2004

    • Author(s)
      R.Takahashi
    • Journal Title

      Appl.Surf.Sci. 223

      Pages: 249-252

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Design of Combinatorial Shadow Masks for Complete Ternary PhaseDiagramming of Solid State Materials2004

    • Author(s)
      R.Takahashi
    • Journal Title

      J.Combi.Chem. 6

      Pages: 50-53

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Mathematical design of linear action masks for binary and ternarycomposition spread film library2004

    • Author(s)
      Y.Yamamoto
    • Journal Title

      Appl.Surf.Sci. 223

      Pages: 9-13

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Electric Field effect in Pulsed Laser Deposition of Epitaxial ZnO thin film2004

    • Author(s)
      C.Hirose
    • Journal Title

      Applied Physics A 79

      Pages: 807-809

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Modeling of grain boundary barrier modulation in ZnO invisible thinfilm transistors2004

    • Author(s)
      F.M.Hossain
    • Journal Title

      Physica E 21

      Pages: 911-915

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Internal Electric Field Effect on Luminescence Properties of ZnO/(Mg,Zn)O Quantum Wells2004

    • Author(s)
      T.Makino
    • Journal Title

      Physica E 21

      Pages: 671-675

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Reduced defect densities in the ZnO epilayer grown on Si substrates bylaser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer2004

    • Author(s)
      T.Onuma
    • Journal Title

      Appl.Phys.Lett 85

      Pages: 5586-5588

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Emission from the higher member of exciton(n=2)in ZnO films grownon annealed buffer templates2004

    • Author(s)
      A.Tsukazaki
    • Journal Title

      Appl.Phys.Lett. 84

      Pages: 3858-3860

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Vdefects of ZnO thin films grown on Si as an ultraviolet optical path2004

    • Author(s)
      Y.-Z.Yoo
    • Journal Title

      Appl.Phys.Lett. 84

      Pages: 502-504

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Pressure-dependent ZnO nanocrsytal growth in a chemical vapor deposition process2004

    • Author(s)
      B.P.Zhang
    • Journal Title

      J.Phys.Chem.B 108

      Pages: 10899-10902

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Second harmonic generation in self-assembled ZnO microcrystallite thinfilms2004

    • Author(s)
      X.Q.Zhang
    • Journal Title

      Thin Solid Films 450

      Pages: 320-323

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] 'Quaternary InAlGaN-based UV LEDs, Optoelectronic Devices:III-V Nitres Chaper112004

    • Author(s)
      H.Hirayama
    • Journal Title

      Elsevier

      Pages: 285-322

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] 'コンビナトリアルテクノロジー明日を開く'ものつくり'の世界6.3.3エピタキシャル蛍光体薄膜のコンビ合成と最適化2004

    • Author(s)
      山本 幸生
    • Journal Title

      丸善

      Pages: 143-145

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Light-illuminated STM studies on photo-absorption in InAs nanowires2003

    • Author(s)
      T.Takahashi
    • Journal Title

      Ultramicroscopy 97

      Pages: 1-6

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Surface Potential Imaging on InAs L,ow-Dimensional NanostructuresStudied by Kelvin Probe Force Microscopy2003

    • Author(s)
      S.Ono
    • Journal Title

      Jpn.J.Appl.Phys. 42

      Pages: 4869-4873

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Inductivity coupled plasma etching to fabricate the nonlinear opticalpolymer photonic crystal waveguides2003

    • Author(s)
      S.Inoue
    • Journal Title

      Mater.Sci.Eng.B 103

      Pages: 170-176

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Dry-etching method fabricating photonic-crystal waveguides in nonlinearoptical polymers2003

    • Author(s)
      S.Inoue
    • Journal Title

      Appl.Phys.Lett. 82

      Pages: 2966-2968

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] '「次世代エレクトロニクス薄膜技術」、第6章コンビナトリアルテクノロジー集積化薄膜技術による材料開発の革新2003

    • Author(s)
      松本 祐司
    • Journal Title

      株式会社シーエムシー出版

      Pages: 120-144

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] '先端化学シリーズ「海洋天然物 錯体 コンビナトリアル 全合成」10「固体材料、デバイス開発を高速化する集積化マテリアルチソプ技術」2003

    • Author(s)
      鯉沼 秀臣
    • Journal Title

      丸善株式会社

      Pages: 231-237

    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] N-polar AIN sacrificial layers grown by MOCVD for free-standing AlNsubstrates(Invited Talk2007

    • Author(s)
      M.Takeuchi
    • Organizer
      5th International Workshop on Bulk Nitride Semiconductors(IWBNS-5)
    • Place of Presentation
      Salvador,Brazil
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] N-polar AIN sacrificial layers grown by MOCVD for free-standing A1N substrates, (invited talk)2007

    • Author(s)
      M. Takeuchi
    • Organizer
      Semiconductors(IWBNS-5)
    • Place of Presentation
      Salvador, Brazil
    • Year and Date
      20070900
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] 高効率大面積AlGaN深紫外発光素子実現のためのMOCVD成長(招待講演)2007

    • Author(s)
      武内 道一
    • Organizer
      日本結晶成長学会特別講演会、日本学術振興会第161委員会第54会研究会「窒化物半導体の結晶成長の現状と課題
    • Place of Presentation
      東京
    • Year and Date
      20070400
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] MOCVD crystal growth for large scalc high efficient A1GaN Deep UV LED(invited talk)2007

    • Author(s)
      M. Takeuchi
    • Organizer
      Jpn. Society of Crystal growth
    • Place of Presentation
      Tokyo
    • Year and Date
      20070400
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] 深紫外発光素子の開発(招待講演)2007

    • Author(s)
      青柳 克信
    • Organizer
      電子情報通信学会2007年総合大会
    • Place of Presentation
      名古屋
    • Year and Date
      20070300
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Development of Deep UV LED(invited talk)2007

    • Author(s)
      Y. Aoyagi
    • Organizer
      Society of electro-information
    • Place of Presentation
      Nagoya
    • Year and Date
      20070300
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Improvement of crystalline quality for Al-and N-polar AlN layers bymodified flow-modulation MOCVD growth(Invited Talk)2006

    • Author(s)
      M.Takeuchi
    • Organizer
      4th International Workshop on Bulk Nitride Semiconductors(IWBNS-4)
    • Place of Presentation
      Shiga,Japan
    • Year and Date
      20061000
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Polarity dependent of AlN{0001}decomposition In flowing H_2(Invited Talk)2006

    • Author(s)
      Y.Kumagai
    • Organizer
      4th International Workshop on Bulk Nitride Semiconductors(IWBNS-4)
    • Place of Presentation
      Shiga,Japan
    • Year and Date
      20061000
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Improvement of crystalline quality for Al- and N-polar A1N layers by modified flow-modulation MOCVD growth, (invited talk)2006

    • Author(s)
      M. Takeuchi
    • Organizer
      4th International Workshop on Bulk Nitride. Semiconductors(IWBNS-4)
    • Place of Presentation
      Shiga, Japan
    • Year and Date
      20061000
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Polarity dependent of AIN { 0001} decomposition in flowing H_2, (invited talk)2006

    • Author(s)
      Y. Kumagai
    • Organizer
      4th International Workshop on Bulk Nitride Semiconductors(IWBNS-4)
    • Place of Presentation
      Shiga, Japan
    • Year and Date
      20061000
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Evidence of enhancement of optical Nonlinearity by photonic crystal(invited talk)2006

    • Author(s)
      S. Inoue
    • Organizer
      Nano tech 2006
    • Place of Presentation
      Tokyo
    • Year and Date
      20060200
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Research on nonlinear devices by photonic Crystals(invited talk)2006

    • Author(s)
      S. Inoue
    • Organizer
      Seminar on Nanoscience and Technology
    • Place of Presentation
      Wako
    • Year and Date
      20060200
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Enhancement of optical nonlinearity by nonlinear photonic crystals(invited talk)2006

    • Author(s)
      S. Inoue
    • Organizer
      Jpn. Society of Applied Physics
    • Place of Presentation
      Nagano
    • Year and Date
      20060100
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] フォトニック結晶による非線形光学効果増大を実証(招待講演)2006

    • Author(s)
      井上 振一郎
    • Organizer
      nano tech 2006
    • Place of Presentation
      東京
    • Year and Date
      2006-02-22
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 高非線形性フォトニック結晶による非線形光学応答増大の発現と制御(招待講演)2006

    • Author(s)
      井上 振一郎
    • Organizer
      応用物理学会・量子エレクトロニクス研究会「フォトンマニピュレーションとその応用」
    • Place of Presentation
      長野
    • Year and Date
      2006-01-13
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Characteristics of Two Dimensional Nonlinear Photonic Crystals and those applications, (invited talk)2005

    • Author(s)
      S. Inoue
    • Organizer
      ICIM' 05(The 6th International Conference on Intelligent Materials and Systems)
    • Place of Presentation
      Ichigaya, Japan
    • Year and Date
      20050704-06
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Photonic Crystal and III-N Quantum Dot Laser(Invited Talk)2005

    • Author(s)
      Y.Aoyagi
    • Organizer
      CLEO 2005(The Conference on Lasers and Electro-Optics 2005)
    • Place of Presentation
      Baltimore,USA
    • Year and Date
      20050522-27
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Photonic Crystal and III-N Quantum Dot Laser, (invited talk)2005

    • Author(s)
      Y. Aoyagi
    • Organizer
      CLEO 2005(The Conference on Lasers and Electro-Optics 2005)
    • Place of Presentation
      Baltimore, USA
    • Year and Date
      20050522-27
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Characteristics of Two Dimensional Nonlinear Photonic Crystals and those applications (Invited Talk)2005

    • Author(s)
      S.Inoue
    • Organizer
      ICIM'O5(The 6th International Conference on Intelligent Materials and Systems)
    • Place of Presentation
      Ichigaya,Japan
    • Year and Date
      20050404-06
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Fabrication of nonlinear photonic crystals and their applications(Invited Talk)2005

    • Author(s)
      S.Inoue
    • Organizer
      Photonics West 2005
    • Place of Presentation
      San Jose,CA.
    • Year and Date
      20050122-27
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Fabrication of nonlinear photonic crystals and their applications, (invited talk)2005

    • Author(s)
      S. Inoue
    • Organizer
      Photonics West 2005
    • Place of Presentation
      San Jose, CA.
    • Year and Date
      20050122-27
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Nonlinear Photonic Crystal Fabrication and Application of the PhotonicCrystal to Nonlinear Photonic Devices(Invited Talk)2004

    • Author(s)
      S.Inoue
    • Organizer
      Swiss-Japanese Nanoscience Workshop
    • Place of Presentation
      Nara,Japan
    • Year and Date
      20040623-25
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Nonlinear Photonic Crystal Fabrication and Application of the Photonic Crystal to Nonlinear Photonic Devices(invited talk)2004

    • Author(s)
      S. Inoue
    • Organizer
      Swiss-Japanese Nanoscience Workshop
    • Place of Presentation
      Nara, Japan
    • Year and Date
      20040623-25
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] フォトニック結晶による光非線形デバイスの研究(招待講演)2004

    • Author(s)
      井上 振一郎
    • Organizer
      ナノサイエンステクノロジーセミナー
    • Place of Presentation
      和光
    • Year and Date
      2004-05-20
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] High-throughput screening of binary and oxides by combinatorial technology, (invited talk)2003

    • Author(s)
      H. Koinuma
    • Organizer
      2003 Meeting of the Electrochemical ternary dielectric Society
    • Place of Presentation
      Paris
    • Year and Date
      20030427-0503
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] High-throughput screening of binary and ternary dielectric oxides by combinatorial technoloev(Invited Talk)2003

    • Author(s)
      H.Koinuma
    • Organizer
      2003 Meeting of the Electrochemical Society
    • Place of Presentation
      Paris,France
    • Year and Date
      20030427-0502
    • Description
      「研究成果報告書概要(和文)」より
  • [Book] 光学設計2006

    • Author(s)
      青柳 克信
    • Total Pages
      455-465
    • Publisher
      情報機構
    • Description
      「研究成果報告書概要(和文)」より
  • [Book] LED最新技術動向〜性能向上、課題解決集〜、第5章、紫外LEDの短波長化と高効率化の課題と展望2005

    • Author(s)
      平山 秀樹
    • Total Pages
      91-104
    • Publisher
      情報機構
    • Description
      「研究成果報告書概要(和文)」より
  • [Book] Quaternary InAlGaN-based UV LEDs, Optoelectronic Devices:III-V Nitres Chaper112004

    • Author(s)
      H.Hirayama
    • Total Pages
      285-322
    • Publisher
      Elsevier
    • Description
      「研究成果報告書概要(和文)」より
  • [Book] コンビナトリアルテクノロジー明日を開く'ものつくり'の世界6.3.3エピタキシャル蛍光体薄膜のコンビ合成と最適化2004

    • Author(s)
      山本 幸生
    • Total Pages
      143-145
    • Publisher
      丸善
    • Description
      「研究成果報告書概要(和文)」より
  • [Book] 「次世代エレクトロニクス薄膜技術」、第6章コンビナトリアルテクノロジー集積化薄膜技術による材料開発の革新2003

    • Author(s)
      松本 祐司
    • Total Pages
      120-144
    • Publisher
      株式会社シーエムシー出版
    • Description
      「研究成果報告書概要(和文)」より
  • [Book] 先端化学シリーズ「海洋天然物 錯体 コンビナトリアル 全合成」10「固体材料、デバイス開発を高速化する集積化マテリアルチソプ技術」2003

    • Author(s)
      鯉沼 秀臣
    • Total Pages
      231-237
    • Publisher
      丸善株式会社
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] フォトニック結晶2007

    • Inventor(s)
      井上 振一郎
    • Industrial Property Rights Holder
      東京工業大学
    • Patent Publication Number
      特開2007-286635
    • Filing Date
      2007-06-18
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] フォトニック結晶2007

    • Inventor(s)
      井上 振一郎
    • Industrial Property Rights Holder
      東京工業大学
    • Patent Publication Number
      特開2007-148463
    • Filing Date
      2007-03-19
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] 窒化物系深紫外発光素子およびその製造方法2006

    • Inventor(s)
      青柳 克信
    • Industrial Property Rights Holder
      東京工業大学
    • Industrial Property Number
      海外特許PCT/JP2006/306052
    • Filing Date
      2006-03-20
    • Description
      「研究成果報告書概要(和文)」より
    • Overseas
  • [Patent(Industrial Property Rights)] 窒化物半導体の製造方法2005

    • Inventor(s)
      武内 道一
    • Industrial Property Rights Holder
      東京工業大学
    • Patent Publication Number
      特開2006-278402
    • Filing Date
      2005-03-28
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] AlGaN系深紫外発光素子およびその製造方法2005

    • Inventor(s)
      青柳 克信
    • Industrial Property Rights Holder
      東京工業大学
    • Industrial Property Number
      特願2005-092801
    • Filing Date
      2005-03-29
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] フォトニック結晶導波路のフォトニックバンド構造の測定方法およびその装置2005

    • Inventor(s)
      井上 振一郎
    • Industrial Property Rights Holder
      東京工業大学
    • Patent Publication Number
      特開2006-275568
    • Filing Date
      2005-03-28
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] 発明の名称:蛍光体とその製造方法2005

    • Inventor(s)
      鯉沼 秀臣
    • Industrial Property Rights Holder
      東京工業大学
    • Patent Publication Number
      特開2007-161891
    • Filing Date
      2005-12-14
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] 半導体成長用基板および半導体膜の製造方法2004

    • Inventor(s)
      青柳 克信
    • Industrial Property Rights Holder
      東京工業大学
    • Patent Publication Number
      特開2006-185962
    • Filing Date
      2004-12-24
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] フォトニック結晶構造を有する光素子2004

    • Inventor(s)
      井上 振一郎
    • Industrial Property Rights Holder
      東京工業大学
    • Patent Publication Number
      特開2005-250429
    • Filing Date
      2004-03-06
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] 4元組成傾斜膜の作成方法及びこの方法を用いた2元組成、膜厚傾斜膜の作製方法2004

    • Inventor(s)
      鯉沼 秀臣
    • Industrial Property Rights Holder
      東京工業大学
    • Industrial Property Number
      特願2003-079193(PTCに移行)JP2004-003304
    • Filing Date
      2004-03-12
    • Description
      「研究成果報告書概要(和文)」より
    • Overseas
  • [Patent(Industrial Property Rights)] フォトニック結晶2003

    • Inventor(s)
      井上 振一郎
    • Industrial Property Rights Holder
      東京工業大学
    • Patent Publication Number
      特開2004-133429
    • Filing Date
      2003-08-29
    • Description
      「研究成果報告書概要(和文)」より

URL: 

Published: 2010-02-04  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi