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2017 Fiscal Year Annual Research Report

Electron beam excited nitride-based UV laser

Research Project

Project/Area Number 15H02019
Research InstitutionMeijo University

Principal Investigator

岩谷 素顕  名城大学, 理工学部, 准教授 (40367735)

Co-Investigator(Kenkyū-buntansha) 上山 智  名城大学, 理工学部, 教授 (10340291)
松本 貴裕  名古屋市立大学, 大学院芸術工学研究科, 教授 (10422742)
竹内 哲也  名城大学, 理工学部, 教授 (10583817)
Project Period (FY) 2015-04-01 – 2018-03-31
Keywords電子線 / 窒化ガリウム / 窒化アルミニウム / レーザ / 光共振器 / ウェットエッチング / 低閾値 / 光強度
Outline of Annual Research Achievements

本研究課題では、電子線を励起源とするAlGaN/GaN系の紫外線レーザを実現することを目標に研究を行った。レーザ発振に必要な電子線装置を実現すること、レーザ発振可能な高品質な結晶を作製すること、さらに光共振器を形成することが当初の課題としてあり、それらを研究代表者を中心に最適化を進めた。
結果として、当初の目的通りAlGaN/GaN系量子井戸構造を用いることによって、350nm帯のレーザ発振をこの波長域で世界で初めての発振を実現した。さらに学術的な理解を進めるために電子線の加速電圧や活性層の構造に関してデバイスシミュレータ、電子線のシミュレータの活用、さらには実験的な検証によって低閾値で発振するのに必要な構造の検討を行った。これらの検討を進めるにしたがって光出力もmWを超える高出力化が達成された。
また光励起との比較をはじめとして様々な検討を行うことによって電子線励起レーザの有用性を検討した。
また、付帯的な成果として高品質なAlGaN結晶の実現、従来困難とされていたAlGaN系材料のウェットエッチング法の確立、さらには高感度な受光素子の実現などの成果を達成した。
今後は、さらなる短波長レーザの実現などの課題が残されている。2017年度の研究によって光励起では280nm帯のレーザを実現することができた。その一方で、350nm帯のレーザとはレーザ発振に必要な光励起パワー密度が高いという課題が残されており、結晶品質のさらなる向上、さらには光学ロスの低減などが必要であると考えられる。
以上のように、本研究課題は当初の研究目的を達成し、さらに付随した成果を得た。その一方で、さらに本研究を発展させ、最終的に実用化可能なデバイスとして発展させることが重要だと思われる。

Research Progress Status

29年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

29年度が最終年度であるため、記入しない。

  • Research Products

    (42 results)

All 2018 2017 Other

All Int'l Joint Research (1 results) Journal Article (9 results) (of which Peer Reviewed: 9 results,  Open Access: 2 results) Presentation (25 results) (of which Int'l Joint Research: 18 results,  Invited: 17 results) Patent(Industrial Property Rights) (7 results) (of which Overseas: 1 results)

  • [Int'l Joint Research] リンチョビン大学(スウェーデン)

    • Country Name
      SWEDEN
    • Counterpart Institution
      リンチョビン大学
  • [Journal Article] A GaN-Based VCSEL with a Convex Structure for Optical Guiding2018

    • Author(s)
      Natsumi Hayashi, Junichiro Ogimoto, Kenjo Matsui, Takashi Furuta, Takanobu Akagi, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
    • Journal Title

      Physica Status Solidi A

      Volume: 1700648 Pages: 1700648

    • DOI

      10.1002/pssa.201700648

    • Peer Reviewed / Open Access
  • [Journal Article] Growth of High-Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High-Temperature Annealing2018

    • Author(s)
      Junya Hakamata, Yuta Kawase, Lin Dong, Sho Iwayama, Motoaki Iwaya,
    • Journal Title

      Phys. Status Solidi B

      Volume: 1700506 Pages: 1700506

    • DOI

      10.1002/pssb.201700506

    • Peer Reviewed
  • [Journal Article] Characterization of nonpolar a-plane GaN epi-layers grown on high-density patterned r-plane sapphire substrates2018

    • Author(s)
      Daiki Jinno, Shunya Otsuki, Shogo Sugimori, Hisayoshi Daicho, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    • Journal Title

      Journal of Crystal Growth

      Volume: 484 Pages: 50-55

    • DOI

      10.1016/j.jcrysgro.2017.12.036

    • Peer Reviewed
  • [Journal Article] High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector2017

    • Author(s)
      Akira Yoshikawa, Saki Ushida, Kazuhiro Nagase, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    • Journal Title

      Applied Physics Letters

      Volume: 111 Pages: 191103

    • DOI

      10.1063/1.5001979

    • Peer Reviewed
  • [Journal Article] High-quality AlN film grown on a nanosized concave-convex surface sapphire substrate by metalorganic vapor phase epitaxy2017

    • Author(s)
      Akira Yoshikawa, Takaharu Nagatomi, Tomohiro Morishita, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    • Journal Title

      Applied Physics Letters

      Volume: 111 Pages: 162102

    • DOI

      10.1063/1.5008258

    • Peer Reviewed
  • [Journal Article] Characterization and optimization of sputtered AlN buffer layer on r-plane sapphire substrate to improve the crystalline quality of nonpolar a-plane GaN2017

    • Author(s)
      Daiki Jinno, Shunya Otsuki, Shogo Sugimori, Hisayoshi Daicho, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    • Journal Title

      Journal of Crystal Growth

      Volume: 480 Pages: 90-95

    • DOI

      10.1016/j.jcrysgro.2017.10.018

    • Peer Reviewed
  • [Journal Article] Theoretical investigation of nitride nanowire-based quantum-shell lasers2017

    • Author(s)
      Yuki Kurisaki, Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki
    • Journal Title

      Physica Status Solidi A

      Volume: 214 Pages: 1600867

    • DOI

      10.1002/pssa.201600867

    • Peer Reviewed
  • [Journal Article] Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer2017

    • Author(s)
      Takafumi Hayashi, Yuta Kawase, Noriaki Nagata, Takashi Senga, Sho Iwayama, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Takahiro Matsumoto
    • Journal Title

      Scientific Reports

      Volume: 7 Pages: 2944

    • DOI

      10.1038/s41598-017-03151-8

    • Peer Reviewed / Open Access
  • [Journal Article] Reduction of contact resistance in V-based electrode for high AlN molar fraction n-type AlGaN by using thin SiNx intermediate layer2017

    • Author(s)
      Noriaki Nagata, Takashi Senga, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    • Journal Title

      Physica Status Solidi C

      Volume: 14 Pages: 1600243

    • DOI

      10.1002/pssc.201600243

    • Peer Reviewed
  • [Presentation] 岩谷 素顕, Ling Dong , 岩山 章 ,川瀬雄太 ,竹内 哲也, 上山 智, 赤﨑 勇,三宅秀人2018

    • Author(s)
      AlGaN 系紫外半導体レーザの現状とその可能性
    • Organizer
      電子情報通信学会
    • Invited
  • [Presentation] GaInN系面発光レーザーの開発と展望2018

    • Author(s)
      竹内哲也、上山 智、岩谷素顕、赤﨑 勇
    • Organizer
      レーザー学会学術講演会第38回年次大会
    • Invited
  • [Presentation] 電子線励起による GaN/AlGaN 系レーザー2018

    • Author(s)
      岩谷素顕、岩山章、竹内哲也、上山智、赤﨑勇、松本 貴裕
    • Organizer
      レーザー学会学術講演会第38回年次大会
    • Invited
  • [Presentation] MOVPE-grown GaN-based tunnel junction and its application2018

    • Author(s)
      T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
    • Organizer
      SPIE Photonics West OPTO
    • Int'l Joint Research / Invited
  • [Presentation] GaInN/GaN multi-quantum shells for high-performance optoelectronic devices2018

    • Author(s)
      S. Kamiyama, T. Takeuchi, M. Iwaya and I. Akasaki
    • Organizer
      SPIE Photonics West OPTO
    • Int'l Joint Research / Invited
  • [Presentation] EB excitation of UV lasers using the GaN/AlGaN MQW active layers2018

    • Author(s)
      Motoaki Iwaya, Takafumi Hayashi, Noriaki Nagata, Takashi Senga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Takahiro Matsumoto
    • Organizer
      EMN meeting
    • Int'l Joint Research / Invited
  • [Presentation] GaN-based VCSELs towards high efficiency2017

    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      OPIC 2017 LDC’17
    • Int'l Joint Research / Invited
  • [Presentation] 名城大学におけるGaInN系面発光レーザの現状とその展望2017

    • Author(s)
      竹内哲也、上山 智、岩谷素顕、赤﨑 勇
    • Organizer
      光電相互変換第125委員会 第236回研究会
    • Invited
  • [Presentation] 高効率窒化物半導体発光素子に向けた新展開2017

    • Author(s)
      竹内哲也、上山 智、岩谷素顕、赤﨑 勇
    • Organizer
      ワイドギャップ半導体光・電子デバイス第162委員会 第104回合同研究会
    • Invited
  • [Presentation] GaInN vertical-cavity surface-emitting lasers with AlInN/GaN DBRs2017

    • Author(s)
      Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
    • Organizer
      The 12th international conference on nitride semiconductors
    • Int'l Joint Research / Invited
  • [Presentation] Nitride-based nanowire and multi-quantum shell active layer for advanced photonic devices2017

    • Author(s)
      S. Kamiyama, T. Takeuchi, M. Iwaya and I. Akasaki
    • Organizer
      The 3rd Congress on Materials Science and Engineering
    • Int'l Joint Research / Invited
  • [Presentation] Realization of electron beam excitation of UV laser using a AlGaN/GaN multi quantum well active layer2017

    • Author(s)
      Motoaki Iwaya, Takafumi Hayashi, Noriaki Nagata, Takashi Senga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Takahiro Matsumoto
    • Organizer
      European Material Research Scociety Symposium Fall meeting
    • Int'l Joint Research / Invited
  • [Presentation] High-performance GaN-based VCSELs2017

    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      2017 IEEE Photonics Conference
    • Int'l Joint Research / Invited
  • [Presentation] 窒化物半導体における新しい導電性制御:トンネル接合と分極ドーピング2017

    • Author(s)
      竹内哲也、岩谷素顕、上山 智、赤﨑 勇
    • Organizer
      第36回電子材料シンポジウム
    • Invited
  • [Presentation] Fabrication of high-quality AlN template by high-temperature annealing for deepultraviolet2017

    • Author(s)
      Motoaki Iwaya, Takafumi Hayashi, Noriaki Nagata, Takashi Senga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Takahiro Matsumoto
    • Organizer
      International Workshop on UV Materials and Devices 2017
    • Int'l Joint Research / Invited
  • [Presentation] AlGaN系紫外レーザの現状と期待2017

    • Author(s)
      岩谷 素顕, Ling Dong , 岩山 章 ,川瀬雄太 ,竹内 哲也, 上山 智, 赤﨑 勇,三宅秀人
    • Organizer
      第46回日本結晶成長学会国内会議
    • Invited
  • [Presentation] Alternative hole injections in nitride-based light-emitting devices2017

    • Author(s)
      T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
    • Organizer
      2017 MRS Fall Meeting
    • Int'l Joint Research / Invited
  • [Presentation] Semipolar (10-1-1) GaInN/GaN p-i-n lightemitting2017

    • Author(s)
      N. Muramatsu, T. Takanishi, S. Mitsufuji, M. Iwaya, T. Takeuchi, S.Kamiyama, and I. Akasaki
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
  • [Presentation] Fabrication of GaInN/GaInP/GaAs/Ge 4-junction solar cell using wafer bonding technology2017

    • Author(s)
      Kazuya Takahashi Ryoji Shinoda Syun Mitsufuji Motoaki Iwaya Tetsuya Takeuchi Satoshi Kamiyama Tomokazu Hattori Isamu Akasaki, Hiroshi Amano
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
  • [Presentation] Feasibility study on limited area formation of GaN nanowires for multi-quantum shell LDs2017

    • Author(s)
      Minoru Takebayashi, Yuki Kurisaki, Hiroki Shibuya, Myunghee Kim, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
  • [Presentation] GaN-based VCSELs with lateral optical confinement structures2017

    • Author(s)
      N. Hayashi , K. Matsui , T. Takeuchi , S. Kamiyama, M. Iwaya, I. Akasaki
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
  • [Presentation] High electron concentrations in MOCVD-grown Si-doped dilute AlxGa1-xN on sapphire2017

    • Author(s)
      B. Monemar, P. P. Paskov, J. P. Bergman, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama and I. Akasaki
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
  • [Presentation] Modified Shockley diode equation suitable for InGaN-based light-emitting diodes2017

    • Author(s)
      Dong-Pyo Han, Jong-In Shim, Dong-Soo Shin, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
  • [Presentation] Electron beam excitation of ultraviolet laser using a GaN/AlGaN multi quantum well active layer2017

    • Author(s)
      Takafumi Hayashi, Lin Dong, Yuta Kawase, Noriaki Nagata, Takashi Senga, Sho Iwayama, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Takahiro Matsumoto
    • Organizer
      The 8th Asia-Pacific Workshop on Widegap Semiconductors
    • Int'l Joint Research
  • [Presentation] Acceleration Voltage Dependence of Threshold Power Density in AlGaN/GaN Based Electron2017

    • Author(s)
      Motoaki Iwaya, Takafumi Hayash, Noriaki Nagata,Takashi Senga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Takahiro Matsumoto
    • Organizer
      11th International Symposium on
    • Int'l Joint Research
  • [Patent(Industrial Property Rights)] 紫外線受光素子及び紫外線受光素子の製造方法2018

    • Inventor(s)
      岩谷素顕、牛田彩希、吉川陽、永瀬和宏、永富隆清
    • Industrial Property Rights Holder
      名城大学、旭化成
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      特願2018-007606
  • [Patent(Industrial Property Rights)] 発光体発光素子および発光体発光素子の製造方法2017

    • Inventor(s)
      上山智、竹内哲也、岩谷素顕、赤崎勇
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      特願2017-127720
  • [Patent(Industrial Property Rights)] 紫外線受光素子2017

    • Inventor(s)
      岩谷素顕、牛田彩希、吉川陽、永瀬和宏
    • Industrial Property Rights Holder
      名城大学、旭化成
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      特願2017-116187
  • [Patent(Industrial Property Rights)] 窒化物半導体発光素子の製造方法、及び窒化物半導体発光素子2017

    • Inventor(s)
      竹内哲也、岩谷素顕、赤塚泰斗、岩山章、赤崎勇
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      特願2017-217351
  • [Patent(Industrial Property Rights)] 窒化物半導体発光素子の製造方法、及び窒化物半導体発光素子2017

    • Inventor(s)
      竹内哲也、不破亮太、岩谷素顕、岩山章、赤崎勇
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      特願2017-217348
  • [Patent(Industrial Property Rights)] ⅲ族窒化物半導体発光素子とその製造方法2017

    • Inventor(s)
      竹内哲也、上山智、岩谷素顕、赤崎勇、小島久範、安田俊輝、飯田一喜
    • Industrial Property Rights Holder
      名城大学、豊田合成
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      特願2017-217383
  • [Patent(Industrial Property Rights)] 窒化物半導体基板とその製造方法2017

    • Inventor(s)
      岩谷素顕、吉川陽、森下朋浩
    • Industrial Property Rights Holder
      名城大学、旭化成
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      PCT/JP2017/040313
    • Overseas

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Published: 2018-12-17  

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