Electron beam excited nitride-based UV laser

2017 Fiscal Year Final Research Report

• Project/Area Number: 15H02019
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Meijo University
• Principal Investigator: Iwaya Motoaki 名城大学, 理工学部, 准教授 (40367735)
• Co-Investigator(Kenkyū-buntansha): 上山 智 名城大学, 理工学部, 教授 (10340291) ; 松本 貴裕 名古屋市立大学, 大学院芸術工学研究科, 教授 (10422742) ; 竹内 哲也 名城大学, 理工学部, 教授 (10583817)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 窒化物半導体 / レーザ / 電子線励起

Outline of Final Research Achievements

In this research project, we aimed at realization of AlGaN-based ultraviolet laser by electron beam excitation which have widely applied fields such as medical, biotechnology and microfabrication. Since there is no device incorporating a laser emittable electron beam source, we started with the development of the device, and revealed that there is a problem peculiar to the electron beam excitation by utilizing an electron beam simulators. Furthermore, by utilizing a device simulator, the optimum structure was clarified and finally AlGaN electron beam excited laser was realized.

Free Research Field

半導体工学