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2017 Fiscal Year Final Research Report

Realization of n-type AlN by clarifying the mechanism of point defect formation in bulk AlN crystal

Research Project

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Project/Area Number 15H03555
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Crystal engineering
Research InstitutionTokyo University of Agriculture and Technology

Principal Investigator

Kumagai Yoshinao  東京農工大学, 工学(系)研究科(研究院), 卓越教授 (20313306)

Co-Investigator(Kenkyū-buntansha) 村上 尚  東京農工大学, 工学(系)研究科(研究院), 准教授 (90401455)
富樫 理恵  東京農工大学, 工学(系)研究科(研究院), 助教 (50444112)
Research Collaborator SITAR Zlatko  
KINOSHITA Toru  
TUOMISTO Filip  
Project Period (FY) 2015-04-01 – 2018-03-31
Keywords窒化アルミニウム / 点欠陥 / n形導電性 / 不純物 / ドーピング / HVPE法 / ショットキーバリアダイオード
Outline of Final Research Achievements

Realization of AlN substrates with n-type conductivity was investigated by high-speed growth of thick AlN layers using hydride vapor phase epitaxy (HVPE) on low-dislocation-density bulk AlN substrates prepared by physical vapor transport. Mechanism of unintentionally accumulated high concentration of Si impurity on the HVPE-AlN surface was clarified, which made it possible to eliminate the Si accumulation and investigate intentional Si doping for AlN. Control of Si concentration in AlN could be achieved by using silicon tetrachloride as a doping gas. Bulk AlN substrates with n-type conductivity were successfully prepared by the intentional Si doping. World first vertical Schottky barrier diodes fabricated using the n-type AlN substrates showed high rectification and high reverse breakdown voltage.

Free Research Field

結晶成長

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Published: 2019-03-29  

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