The plasmonic extraordinary transmission phenomenon of III-nitride semiconductors and application to UV emitting devices

2017 Fiscal Year Final Research Report

• Project/Area Number: 15H03556
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Mie University
• Principal Investigator: Hiramatsu Kazumasa 三重大学, 工学研究科, 教授 (50165205)
• Co-Investigator(Kenkyū-buntansha): 三宅 秀人 三重大学, 地域イノベーション学研究科, 教授 (70209881) ; 元垣内 敦司 三重大学, 工学研究科, 准教授 (00303751)
• Research Collaborator: LIN Chia-Hung ; HAYASHI Yusuke ; XIAO Shiyu ; YOSHIZAWA Ryo ; OKADA Shyunsuke ; ITO Yuusuke ; WATANABE Naoya ; KAWAI Shoya ; FUKUDA Ryo ; TANAKA Shuuichi ; Nakajima TOMOYASU ; SUZUKI Shuhei ; MITO Shinya
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 窒化物半導体 / 窒化アルミニウム / 紫外線発光デバイス / 表面プラズモン / プラズモン誘導透過現象

Outline of Final Research Achievements

In this study, we investigate the effect of high-performance ultraviolet region optical devices (ultraviolet region polarization control, high Efficiency ultraviolet light emitting device). In the research on crystal growth, we were able to obtain a prospect to obtain polar / nonpolar AlGaN high quality crystal production. We also clarified that plasmon - induced light transmission can be controlled by using a metal diffraction grating structure. Based on these findings, we were able to obtain prospects for high performance ultraviolet region optical devices in the future.

Free Research Field

半導体工学、オプトエレクトロニクス