Study for light-emitting devices using metal-halide perovskite-type semiconductors

2017 Fiscal Year Final Research Report

• Project/Area Number: 15H03573
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Optical engineering, Photon science
• Research Institution: The University of Tokyo
• Principal Investigator: Kondo Takashi 東京大学, 先端科学技術研究センター, 教授 (60205557)
• Co-Investigator(Renkei-kenkyūsha): MIYASAKA Tsutomu 桐蔭横浜大学, 医用工学部, 特任教授 (00350687) ; EMA Kazuhiro 上智大学, 理工学部, 教授 (40194021)
• Research Collaborator: NAKAMURA Yuiga ; SANO Junro ; KIMURA Kohei ; TAKASHIMA Shun
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: ハロゲン化鉛ペロブスカイト / ペロブスカイト型半導体 / 真空蒸着 / ヘテロ構造 / ダブルヘテロ構造 / エピタキシャル薄膜 / ヘテロエピタキシー

Outline of Final Research Achievements

Metal-halide perovskite-type semiconductors are used in light-absorbing layers of the perovskite solar cells which have been invented by Japanese researchers. We have investigated fabrication of methylammnonium lead halide heterostructures bearing potential applications to light-emitting devises in mind. We have succeeded in fabricating polycrystalline heterostructures by using vacuum evaporation technique for the first time. Moreover, we have also succeeded in the first demonstration of hetero-epitaxial thin-film formation on single-crystal lead-bromide perovskite substrates. In addition, we have studied a novel phenomenon, photo-induced phase separation of semiconductor alloys, which will hinder band engineering of the perovskite-type semiconductors.

Free Research Field

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