Formation of graphene with low density of defects by plasma-assisted anneal on flat SiC(0001) surfaces

2017 Fiscal Year Final Research Report

• Project/Area Number: 15H03902
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Production engineering/Processing studies
• Research Institution: Osaka University
• Principal Investigator: Arima Kenta 大阪大学, 工学研究科, 准教授 (10324807)
• Research Collaborator: HOSOO Kohei ; ITO Ryota ; MINAMI Ouki ; LI Shaoxian ; HIRANO Tomoki
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: グラフェン / シリコンカーバイド / プラズマ / 表面改質 / ウェットエッチング / 酸化膜

Outline of Final Research Achievements

Graphene is a promising material for future electronic devices. Although the epitaxial growth of graphene by thermal decomposition of SiC in vacuum is familiar, the control of defects on graphene is difficult. We have developed a method to form graphene with low density of defects on a flattened SiC surface by the combined process of plasma treatment, wet etching and thermal anneal. A key in this process is the deposition of an additional carbon layer at the monolayer level on SiC by the plasma treatment. In this study, we investigate the fundamental property of surface modification of SiC by plasma as well as the effect of the carbon layer on the quality of graphene.

Free Research Field

生産工学