2017 Fiscal Year Final Research Report
Fundamental physics of ultra-short-pulse generation in clean quantum-structure semiconductor lasers
| Project/Area Number |
15H03968
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
挾間 優治 東京大学, 物性研究所, 助教 (80759150)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Keywords | 半導体レーザー / 利得スイッチ / 超放射 / 光物性 / 半導体物性 / 非線形性 |
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| Outline of Final Research Achievements |
We fabricated high-quality GaAs multi-quantum-well and double-hetero-structure semiconductor lasers, made strong impulsive optical pumping by using mode-locked Ti sapphire lasers and mode-locked fiber lasers. Pulse dynamics of their output short pulse was measured via a streak camera, photo-diodes, and an auto-correlator. We obtained fs pulses in the short wavelength part of the output pulses under extremely high pumping, found the importance of gain amplitude instead of quantum confinement, and successfully formulated them with our 2-band-semiconductor rate-equation laser theory. a
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| Free Research Field |
a半導体物理学
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