Measurements and analysis of electronic properties and interface structure of diamond MOS structures with extremely high two-dimensional carrier concentration

2017 Fiscal Year Final Research Report

• Project/Area Number: 15H03977
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Saga University
• Principal Investigator: Kasu Makoto 佐賀大学, 工学(系)研究科(研究院), 教授 (50393731)
• Co-Investigator(Kenkyū-buntansha): 高橋 和敏 佐賀大学, シンクロトロン光応用研究センター, 准教授 (30332183)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: ダイヤモンド半導体

Outline of Final Research Achievements

In this work, we performed fundamental study of electronic properties and interface structure of diamond MOS structures with extremely high two-dimensional carrier concentration. Here, the diamond MOS structures have been realized by the authors’ proposed highly-thermal stabilization passivation layer and NO2 p-type doping. (1) ALD system was modified and used for insulation layer deposition. (2) From synchrotron radiation X-ray topography, we identified edge- and mix-type dislocations and Frank-type stacking fault, (3) By C-V and conductance measurements, carrier doping using inorganic molecules were investigated, (3) Interface state and fixed charge distribution were investigated using synchrotron X-ray photo emission spectroscopy and photo-excited C-V measurements. (3) Diamond MOS FETs were fabricated and two-dimensional carriers were analyzed.

Free Research Field

半導体工学