Study on impurity control in an extremely-low concentration range for obtaining highly-functional diamond crystals

2017 Fiscal Year Final Research Report

• Project/Area Number: 15H03980
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: National Institute for Materials Science
• Principal Investigator: TERAJI TOKUYUKI 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主幹研究員 (50332747)
• Co-Investigator(Renkei-kenkyūsha): KOIDE Yasuo 国立研究開発法人物質・材料研究機構, 技術開発・共用部門, 部門長 (70195650) ; WATANABE Kenji 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主席研究員 (20343840)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 電子・電気材料 / 結晶成長 / ダイヤモンド / 不純物制御

Outline of Final Research Achievements

In this study, two research items, “ultra-high purity diamond growth” and “ppb-range donor/acceptor control”, were carried out. In the former case, we succeeded to grow high-purity diamond films by suppress incorporation of nitrogen and silicon through modification of diamond growth system. Finally, ultra-high purity diamond plate with nitrogen concentration of 0.08ppb（1.4×1013 cm-3）was successfully grown. In the latter case, we proposed unique growth condition which is based on methane/nitrogen mixture gas with nitrogen concentration is as low as 500ppm.

Free Research Field

半導体工学