Creation of large magnetocapacitance devices using magnetic nanoscale junctions

2017 Fiscal Year Final Research Report

• Project/Area Number: 15H03981
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Hokkaido University
• Principal Investigator: Kaiju Hideo 北海道大学, 電子科学研究所, 准教授 (70396323)
• Co-Investigator(Kenkyū-buntansha): 西井 準治 北海道大学, 電子科学研究所, 教授 (60357697) ; 長浜 太郎 北海道大学, 工学研究院, 准教授 (20357651)
• Co-Investigator(Renkei-kenkyūsha): KOMINE Takashi 茨城大学, 工学部, 准教授 (90361287)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: スピントロニクス / 磁性ナノ薄膜 / 誘電体 / 交流インピーダンス特性

Outline of Final Research Achievements

Spintronics, which is an emerging research field utilizing the charge and spin degrees of freedom of electrons, has received much attention due to the next-generation technology that provides new functionalities in conventional electronics. In this study, we fabricate spintronic devices, in which a thin insulating layer is sandwiched between magnetic thin-film layers, and investigate magnetocapacitance effect. As a result, we successfully observe the highest magnetocapacitance ratio of 155%, which is three times larger than the conventional value (=50%). The experimental results can be quantitatively explained by a newly proposed theoretical calculation based on Debye-Frohlich model. Since this calculation suggests that the magnetocapacitance ratio can reach 1000%, the further development will be made in near future.

Free Research Field

応用物理