Research on semiconductor spin devices with ferromagnetic semiconductors

2017 Fiscal Year Final Research Report

• Project/Area Number: 15H03988
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: PHAM NAM HAI 東京工業大学, 工学院, 准教授 (50571717)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 強磁性半導体 / スピンダイオード / スピントランジスタ

Outline of Final Research Achievements

In this research, we successfully developed a new Fe-doped p-type ferromagnetic semiconductor (Ga,Fe)Sb and a new n-type ferromagnetic semiconductor (In,Fe)Sb, which are necessary for fabrication of semiconductor spin devices. Furthermore, we demonstrated intrinsic ferromagnetism in both materials at room-temperature. Using Fe-doped ferromagnetic semiconductors, we fabricated spin diodes and spin transistors, and investigated their spin-dependent transport characteristics. In an Esaki spin-diode structure of n-(In,Fe)As/p-InAs, we observed the spin-split conduction band of (In,Fe)As for the first time by using the tunneling spectroscopy method. We also fabricated field-effect transistors with an (In,Fe)As quantum well, and electrically control the Curie temperature of the (In,Fe)As quantum well using the wave function engineering method. Our results provide an approach for versatile, low power, and ultrafast manipulation of magnetization.

Free Research Field

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