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2017 Fiscal Year Final Research Report

Clarification of step structure formation on the solution growth interface of SiC by direct interface observation and molecular dynamics simulation

Research Project

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Project/Area Number 15H04166
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Metal making/Resorce production engineering
Research InstitutionThe University of Tokyo

Principal Investigator

Yoshikawa Takeshi  東京大学, 生産技術研究所, 准教授 (90435933)

Co-Investigator(Kenkyū-buntansha) 川西 咲子  東北大学, 多元物質科学研究所, 助教 (80726985)
澁田 靖  東京大学, 大学院工学系研究科(工学部), 准教授 (90401124)
Project Period (FY) 2015-04-01 – 2018-03-31
Keywordsシリコンカーバイド / 固液界面 / 直接観察 / 分子動力学法
Outline of Final Research Achievements

By using the in-situ observation technique of solution growth interface , it was determined that the generation of striated inclusions at SiC growth interface is caused by bunching step forming after the interaction of the edge of spiral hilock with advancing steps. Then, the continuous stable growth of spiral growth at the threading screw dislocation was achieved at the small supersaturation condition, and its usage to derive the relative value of the step energy from its slope structure was demonstrated.
The interface growth behavior at the interface of Si-C solution and 3C, 4H, 6H-SiC crystals were studied by molecular dynamics simulation, and the growth behavior on different crystal planes was evaluated. Especially, the growth on 4H-SiC{1-102} shows the continuous stable growth with the rough interface.

Free Research Field

高温物理化学

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Published: 2019-03-29  

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