Bistability/instability of amorphous oxide semiconductor, and its application development

2016 Fiscal Year Final Research Report

• Project/Area Number: 15H06207
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Single-year Grants
• Research Field: Structural/Functional materials
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: KEISUKE IDE 東京工業大学, 科学技術創成研究院, 助教 (70752799)
• Project Period (FY): 2015-08-28 – 2017-03-31
• Keywords: アモルファス酸化物半導体 / 弱結合酸素 / 不純物水素 / 膜構造

Outline of Final Research Achievements

Amorphous oxide semiconductor (AOS) is relatively new functional material compared with amorphous Si, crystalline ZnO etc. Since AOS has amorphous structure (i.e., non-order) and several components such as In, Ga, Zn and O, it seems hard to figure out the defect species and the mechanism of instability due to the complexity of structure.
In this study, we carefully choose the effective method on AOS, like HAADF-STEM, thermal desorption spectroscopy, in-situ ellipsometory, Hard X-ray spectroscopy and so on. As a result, we succeeded to figure out the chemical states of excess oxygen in AOS and the effects of hydrogen on sugbap defect states. Finally, we obtain new functional AOS materials, e.g. AOS phosphor and ultra-wide bandgap AOS.

Free Research Field

酸化物半導体デバイス