Investigation of transparent conducting materials by topotactic fluorinating reaction

2016 Fiscal Year Final Research Report

• Project/Area Number: 15H06901
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Single-year Grants
• Research Field: Structural/Functional materials
• Research Institution: Tokyo Institute of Technology (2016); Kanagawa Academy of Science and Technology (2015)
• Principal Investigator: Shigematsu Kei 東京工業大学, 科学技術創成研究院, 特任助教 (40754578)
• Project Period (FY): 2015-08-28 – 2017-03-31
• Keywords: 酸化物薄膜 / パルスレーザー堆積法 / トポタクティック反応

Outline of Final Research Achievements

In this research, topotactic fluorinating reaction of amorphous zinc compounds were investigated. It is found that fluorination reaction of oxygen-deficient zinc oxide films terminated at the vicinity of surface region. The content of oxygen-deficiency in precursor, which is related to anion diffusion ratio, less influenced on fluorination reaction. The fabrication and characterization of galium-doped amorphous zinc oxynitride were also studied. Amorphous form of galium-doped zinc oxynitride thin film can be obtained when galium content is smaller than 1%. The galium-doped zinc oxynitride thin film showed wider bandgap and lower carrier density than those of non-doped one. In addition, the stability of amorphous zinc oxynitride is improved in terms of maintaining its transport property.

Free Research Field

固体化学