Switching properties of resistive change memory with tiny limited space for conducting filament formation

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K04602
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Nanostructural physics
• Research Institution: Nihon University
• Principal Investigator: TAKASE Kouichi 日本大学, 理工学部, 教授 (10297781)
• Co-Investigator(Kenkyū-buntansha): 清水 智弘 関西大学, システム理工学部, 准教授 (80581165)
• Co-Investigator(Renkei-kenkyūsha): MAKIHARA Katsunori 名古屋大学, 大学院工学研究課, 准教授 (90553561)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 抵抗変化メモリ / スイッチング電圧の再現性 / 導電性フィラメント / ナノワイヤーによるフィラメント制御

Outline of Final Research Achievements

We have fabricated a resistive change random access memory (ReRAM) using insulating NiO nanowires, which is expected to indicate good reproducibility of the switching voltage due to spatial limitation of formation of conductive filaments coming from the nanowire width, where Indium metal as the top electrode was attached on the top of the surface of NiO nanowire array and the bottome electrode was the residual aluminum plate. Current-voltage characteristics of In/NiO/Al were investigated using a conventional two-prove method under monopolar operation, where the current compliance limit was set to 1 mA in the SET process. The sample exhibited clear switching behaviors and memory windows with a narrow switching voltage distribution, comparing with the results of ReRAM using thin film insulator. Our results indicate that reduction of the number of conductive filaments is very effective to improve the reproducibility of the switching voltage.

Free Research Field

ナノ構造物理