Fabrication of mid- infrared devices with nwe nano-structure

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K04666
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Osaka Prefecture University
• Principal Investigator: Kawamura Yuichi 大阪府立大学, 工学(系)研究科(研究院), 教授 (80275289)
• Research Collaborator: KAWAMATA SHUICHI
• Project Period (FY): 2015-10-21 – 2018-03-31
• Keywords: 量子井戸 / 中赤外デバイス / 分子線結晶成長法

Outline of Final Research Achievements

We fabricated new type of quantum well structures for ３～５μm mid-infrared devices by molecular beam epitaxy(MBE) and charactarized their optical properties. First, we studied annealing effects on the emission properties of InGaAsN/GaAsSb type II diodes and found that the emission wavelength of the diodes shifts from 2.6 μm to 3.4μm by 550℃ annealing and to 4.2μm by 600℃ annealing. In adittion, the effective mass of the InGaAsN layers decreases by the annealing. This is considered to be due to that Nitrogen atoms diffuse to cladding layers from InGaAsN active layers by the annealing.

Free Research Field

半導体