Control of insulator/InAlN interface using high-temperature annealed Al2O3 ultrathin layer and its application

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K04672
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Hokkaido University
• Principal Investigator: Akazawa Masamichi 北海道大学, 量子集積エレクトロニクス研究センター, 准教授 (30212400)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 窒化インジウムアルミニウム / MOS / MIS / 二酸化シリコン / InAlN / SiO2

Outline of Final Research Achievements

GaN-based HEMTs can contribute to the 5G wireless communication system. InAlN which can be used as a barrier material on GaN is attracting much attention to improve the operational power and frequency limit. However, since the leakage current through InAlN is high due to its material properties, a combination with an insulator to form a MOS gate structure is necessary. In this project, a research work was made to control an SiO2/InAlN interface. An insertion of ultrathin Al2O3 or plasma oxide interlayer was found to be efficient, leading to a successful formation of an excellent SiO2/InAlN interface.

Free Research Field

半導体デバイスプロセス