Generation and annihilation mechanisms of plasma-induced defects on semiconductor surface

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K04717
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Plasma electronics
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Nunomura Shota 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 主任研究員 (50415725)
• Co-Investigator(Renkei-kenkyūsha): MATSYBARA Koji 産業技術総合研究所, 太陽光発電研究センター, 研究センター長 (90202324)
• Research Collaborator: SAKATA Isao 産業技術総合研究所, 太陽光発電研究センター
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: プラズマ / 半導体 / 水素化アモルファスシリコン / 太陽電池 / 欠陥 / キャリア輸送 / ポンプ－プローブ法 / トラップ

Outline of Final Research Achievements

An in-situ characterization technique for plasma-induced defects has been successfully developed, based on optical pump-probe method. Using this technique, we find that the density of plasma-induced defects is of the order of 1e18 cm-3 for hydrogenated amorphous silicon (a-Si:H) under plasma CVD process. The plasma-induced defects can be annihilated by post-annealing under the conditions of appropriate temperature and period. We have fabricated silicon heterojunction solar cells with a-Si:H passivation layers. The conversion efficiency of 21 % is achieved by controlling the a-Si:H growth conditions and post-annealing treatment, based on the knowledge obtained in this study.

Free Research Field

プラズマエレクトロニクス