2017 Fiscal Year Final Research Report
Metal-carbon eutectic temperature indicator for measuring temperature distribution at high temperature
| Project/Area Number |
15K04729
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
General applied physics
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
Sasajima Naohiko 国立研究開発法人産業技術総合研究所, 計量標準総合センター, 主任研究員 (70357127)
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| Co-Investigator(Kenkyū-buntansha) |
山田 善郎 国立研究開発法人産業技術総合研究所, 計量標準総合センター, 首席研究員 (60358265)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Keywords | 温度測定 / 温度標準 / 放射温度計 / 共晶点 / 高温 / SiCウェハ |
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| Outline of Final Research Achievements |
To measure a temperature distribution above 1500 oC in the plane of the SiC wafers, temperature indicator based on Pt-C eutectic system was investigated. Graphite plates with deposition of platinum on the surface or with platinum foil placed on it were annealed in a furnace at several pre-set temperatures, and surface condition and cross section of the samples were observed by SEM. From the detailed observations of the surface morphology and distribution of platinum alloy inside the graphite plate, annealing temperatures other than eutectic temperature were determined qualitatively for the first time. Combination of platinum foil and graphite plate enables temperature indicator to discriminate the difference in annealing temperature of ± 5 K with respect to the eutectic temperature. Evaluation of the change in reflectance of the sample surface showed possibility to quantify the annealing temperatures.
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| Free Research Field |
温度標準、温度測定、放射温度計、熱物性、高温測定
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