2017 Fiscal Year Final Research Report
High durability of GaAs photocathode by alkali-antimony functional layer
| Project/Area Number |
15K04734
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Quantum beam science
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| Research Institution | Tokyo University of Science |
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Principal Investigator |
Iijima Hokuto 東京理科大学, 理学部第二部物理学科, 助教 (90361534)
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| Project Period (FY) |
2015-10-21 – 2018-03-31
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| Keywords | 光陰極 / 高輝度電子ビーム |
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| Outline of Final Research Achievements |
It is investigated that the cesium-antimony (Cs-Sb) thin film is utilized as functional layer of photocathode to realize long lifetime of photocathode by using of III-V semiconductors, such as gallium arsenide (GaAs). In order to optimize the functional film, the thermal treatment and the film thickness of the cathode substrate were searched. As a result, the thermal treatment is performed at a temperature at which oxide desorption is observed, and the film thickness of 1 nm, which is relatively thin, is optimum for the functional film. It was found that the Cs-Sb film, which lowers the surface potential, even if it is thin, is a compound, heterojunction to the substrate.
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| Free Research Field |
加速器科学
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