Study of the one-dimensional electoronic state of Si(110) surface

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K05119
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Condensed matter physics I
• Research Institution: Tohoku University
• Principal Investigator: Suto Shozo 東北大学, 理学研究科, 教授 (40171277)
• Co-Investigator(Renkei-kenkyūsha): Eguchi Toyoaki 東北大学, 大学院理学研究科, 准教授 (70308196)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: Si(110)表面 / 電子バンド / 水素終端表面 / 角度分解光電子分光法 / 第一原理計算 / 移動度 / 表面フォノン / エッチング過程

Outline of Final Research Achievements

Recently, the Si(110) surface has been used for three-dimensional semiconductor devices in addition to the conventional Si(100) surface. However, there are few research report on the basic physical properties of Si(110). In this research, we aimed to elucidate the electronic band structure of intrinsic Si(110) using the hydrogen-terminated Si(110)-(1×1) surface developed by our group. We measured the band structure using angle-resolved photoemission spectroscopy and calculated the band dispersion using first-principles calculations in the frame work of density functional theory. From these results, we clarified the electronic band structure in both experiment and theory. Furthermore, we evaluated the mobility of electrons and holes, measured the surface phonon dispersion, and elucidated the etching process.

Free Research Field

物性物理学