High transition temperature in antiferromagnetic Cerium Kondo semiconductor

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K05180
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Condensed matter physics II
• Research Institution: Toyama Prefectural University
• Principal Investigator: MURO YUJI 富山県立大学, 工学部, 准教授 (50385530)
• Research Collaborator: FUKUHARA Tadashi 富山県立大学, 工学部, 教授 ; KUWAI Tomohiko 富山大学, 理学部, 教授 ; TAKABATAKE Toshiro 広島大学, 大学院先端物質科学研究科, 教授 ; UMEO Kazunori 広島大学, 自然科学研究支援開発センター, 准教授 ; HAYASHI Kyosuke 広島大学, 大学院先端物質科学研究科, 院生 ; ADROJA Devashibhai ラザフォード・アップルトン研究所, ISIS施設, 上級研究員
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 磁性 / 強相関電子系 / セリウム化合物 / 近藤半導体 / 反強磁性秩序

Outline of Final Research Achievements

In order to clarify the origin of unusually high transition temperature 27 K in an antiferromagnetic Kondo semiconductor CeRu2Al10, we have investigated the correlation between the concentration of conduction electrons and antiferromagnetic order by substituting Si and Zn for Al atom. With decreasing electron concentration, the Kondo effect is enhanced. On the other hand, the antiferromagnetic transition temperature and magnitude of hybridization gap show maximum at pure CeRu2Al10. Because the magnetic property of CeRu2Al10 depends on the average electron number irrespective of subustitution elements, we have proposed that the anisotropic c-f hybridization in CeRu2Al10 should be caused from the complex conduction band constituted by the hybridization between Ru 4d and Al 3p electrons.

Free Research Field

磁性物理学