scanning tunneling spectroscopy under uniaxial stress

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K05185
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Condensed matter physics II
• Research Institution: Tokyo University of Science
• Principal Investigator: sakata hideaki 東京理科大学, 理学部第一部物理学科, 教授 (30215636)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 超伝導 / 走査トンネル顕微鏡 / 電荷密度波

Outline of Final Research Achievements

Application of pressure is one of promising techniques to control the physical properties of materials, such as superconductivity or domain structures of charge density wave states. Although scanning tunneling microscopy (STM) is a powerful technique which realizes the electronic states measurements with atomic resolution, the measurements under pressure is impossible. In this study, we developed STM which enables to measure two dimensional materials under uniaxial stress by using a piezoelectric actuator.
By gluing the two dimensional materials such as transition metal dichacogenides (TMDC) on a multilayer piezoelectric element, we succeeded to observe the surface structure with atomic resolution under the uniaxial stress from room temperature down to 4.2 K. Although the uniaxial stress applied to the samples was not enough to change the domain structures in TMDC, this study extended the understanding of domain structures in TMDC.

Free Research Field

物性物理学