Two-dimensional characterization of degradation mechanism in metal/wide-bandgap semiconductor contacts by scanning internal photoemission microscopy

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K05981
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: University of Fukui
• Principal Investigator: Shiojima Kenji 福井大学, 学術研究院工学系部門, 教授 (70432151)
• Co-Investigator(Kenkyū-buntansha): 橋本 明弘 福井大学, 学術研究院工学系部門, 教授 (10251985)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 金属ー半導体界面 / ワイドバンドギャップ半導体 / 2次元評価 / ショットキー接触 / 欠陥評価

Outline of Final Research Achievements

We have demonstrated that our originally developed two-dimensional characterization method, scanning internal photoemission microscopy, is available to reveal degradation mechanism of metal contacts and surface defects on wide-bandgap semiconductors. We confirmed that this method sensitively characterized an initial stage of the degradation by high-voltage application for GaN, and IGZO Schottky contacts, surface damages induced by ion-implantation and dry etching on GaN and SiC, and large structural defects in GaN and SiC substrates.

Free Research Field

半導体表面、界面