2017 Fiscal Year Final Research Report
Fundamental studies and applications of electrical and spin properties in narrow gap semiconductors
| Project/Area Number |
15K06000
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Fukuoka University |
|---|
Principal Investigator |
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
柴崎 一郎 公益財団法人野口研究所, 顧問 (10557250)
|
|---|
| Project Period (FY) |
2015-04-01 – 2018-03-31
|
| Keywords | ホール素子 / 微小磁場計測 / ノイズ特性 |
|---|
| Outline of Final Research Achievements |
We investigated magnetic field detection properties of small fields, offset fluctuations of the output voltage, and power spectrum of noise. On the sensitivity, it was found that the InSb Hall element can detect the magnetic field of 1 uT precisely, and the maximum fluctuations and the standard deviation are about ±250 nT and 130 nT, respectively. In the noise spectrum, 1/f noise was observed in wide range of frequency and its power density is proportional to the input current.
|
| Free Research Field |
スピントロニクス、III-V族半導体
|
