Polarity-controllable transistors on atomically-thin film semiconductors

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K06006
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: National Institute for Materials Science
• Principal Investigator: Nakaharai Shu 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 主幹研究員 (90717240)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: トランジスタ / ２次元物質 / 極性制御 / ショットキー接合 / 低消費電力

Outline of Final Research Achievements

Polarity-controllable transistors are expected to reduce the power consumption in LSIs, and for the realization of such devices, both electrons and holes must be injected into the intrinsic semiconductor channels from metal contact electrodes. For this purpose, we focused on alpha-phase molybdenum ditelluride (MoTe2), a transition metal dichalcogenide semiconductor. It was found that in MoTe2 the Fermi level pinning effect is much weaker than other semiconducting materials, and therefore, the type of injected carriers from Schottky junction can be changed by changing the metal of contacts. As a result, the unbalance of drive currents in n- and p-type modes of polarity-controllable transistors will be overcome.

Free Research Field

半導体工学