2017 Fiscal Year Final Research Report
Improving the reliability of GaN HEMTs using MMC structures and free-standing GaN substrates
| Project/Area Number |
15K06013
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | University of Fukui |
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Principal Investigator |
Asubar Joel 福井大学, テニュアトラック推進本部, 講師 (10574220)
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| Co-Investigator(Kenkyū-buntansha) |
葛原 正明 福井大学, 学術研究院工学系部門, 教授 (20377469)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Keywords | Gallium nitride / current collapse / power device / semiconductor / AlGaN/GaN HEMT |
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| Outline of Final Research Achievements |
Our aim is to achieve improved stability and reliability of AlGaN/GaN HEMTs using structure-based strategies such as using the so-called multi-mesa-channel. Investigations have revealed that the MMC HEMT is highly resistant to current collapse and other instabilities, making it a leading power electronics prospect. We also investigated other current collapse approaches that can be used in conjunction with MMC in the future such as high pressure water vapor annealing, oxygen plasma treatment, field-plate and metal-insulator-semiconductor structures.
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| Free Research Field |
Power device
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