Proposal of "pore engineering" as a device designing method for conducting-bridge memory

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K06017
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Tokyo University of Science (2017); Tottori University (2015-2016)
• Principal Investigator: Kinoshita Kentaro 東京理科大学, 理学部第一部応用物理学科, 准教授 (60418118)
• Co-Investigator(Kenkyū-buntansha): 伊藤 敏幸 鳥取大学, 工学研究科, 教授 (50193503)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: CBRAM / 細孔 / 溶媒添加 / イオン液体 / 溶媒和イオン液体 / 金属イオン / 導電性ブリッジメモリ / 多結晶薄膜

Outline of Final Research Achievements

This research aims to demonstrate the effectiveness of "pore engineering." The present technique controls memory characteristics through (i) kind of added solvent, (ii) pore size, (iii) properties of the pore surface. In particular, in the metal oxide porous body CBRAM, our research revealed that the polarity and pH of the added solvent have a notable influence on the memory effect. In this study, many solvents for improving CBRAM performance were successfully developed. A significant improvement in the write/erase cycling endurance (SE) was realized, for example, by adding an ionic liquid containing Cu2+ or Ag+. The addition of a solvated ionic liquid makes it easy to approach Cu2+ to the cathode and the reduction of switching voltage as well as the improvement of SE was realized.

Free Research Field

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