Study on fully digital ternary content addressable memory for high-speed processing of the big data.

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K06021
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Kyushu Institute of Technology
• Principal Investigator: NAKAMURA KAZUYUKI 九州工業大学, マイクロ化総合技術センター, 教授 (60336097)
• Project Period (FY): 2015-10-21 – 2018-03-31
• Keywords: TCAM / SRAM / 素子劣化 / レシオレス / ばらつき / 動作マージン / 低電圧 / 連想メモリ

Outline of Final Research Achievements

A fully digital ternary content addressable memory (TCAM) using the ratioless static random access memory (RL-SRAM) technology and fully complementary hierarchical-AND matching comparators (HAMCs) was developed. Since its fully complementary and digital operation enables the effect of device variabilities to be avoided, it can operate with a quite low supply voltage. A test chip incorporating a conventional TCAM and a proposed 24-transistor ratioless TCAM (RL-TCAM) cells and HAMCs was developed using a 0.18um CMOS process. The minimum operating voltage of 0.25V of the developed RL-TCAM is less than half of that of the conventional TCAM.

Free Research Field

工学