2017 Fiscal Year Final Research Report
Integration of III-V quatum dots laser on silicon photonic circuits
| Project/Area Number |
15K06029
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Sophia University |
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Principal Investigator |
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Keywords | シリコンフォトニクス / 半導体レーザ / 量子ドット / 集積化技術 / 有機金属気相成長 |
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| Outline of Final Research Achievements |
To realize the optical interconnection technology, we have studied the integration of III-V quantum dots laser on silicon substrate. We have applied our proposal methods, that is, crystal growth of III-V semiconductor device layers using directly bonded thin-film InP and silicon substrate. 1.5μm wavelength GaInAsP double-heterostructure was grown by metal-organic vapor phase epitaxy, and fabricated fabry-perot laser. We have obtained room temperature pulse lasing, and the threshold current density was almost the same with the laser on InP substrate. Furthermore, we have grown the quantum dots structure on silicon substrate, and obtained the output optical power by injection current.
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| Free Research Field |
光エレクトロニクス
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