2017 Fiscal Year Final Research Report
Study on high efficiency multi stacked quantum dot laser with thin barrier layer
| Project/Area Number |
15K06041
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Aichi Institute of Technology |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
天野 建 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 (10392581)
津田 紀生 愛知工業大学, 工学部, 教授 (20278229)
森 竜雄 愛知工業大学, 工学部, 教授 (40230073)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Keywords | 半導体工学 / 低次元デバイス / 化合物半導体 / 量子ドット |
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| Outline of Final Research Achievements |
A Quantum dot laser (QD laser) is expected to have a low threshold current density and high thermal stability. However, certain problems arise in that a QD laser exhibits inadequate modal gain, transverse operation mode control etc. In our previous work, we achieved 1.3 mm high density, high-uniformity QDs. And we also realized a high modal gain with 8cm-1/QD layer with current injection method. Moreover, high modal gain, we carried out of the multi stacked QD layers with thin barriers because of a introducing to quantum mechanical coupling between vertical QDs.
In our study, we carried out the optical gain of multi-stacked QDs different barrier layers using a variable stripe length (VSL) method.We proposed the double thin multi-stacked structure that it has two features with the keeping high crystal quality and strong quantum mechanical interaction. We observed from VSL method that the double thin multi-stack structure is the highest optical gain than that conventional structure.
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| Free Research Field |
半導体光物性
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