2017 Fiscal Year Final Research Report
Synthesis of molybdenum silicide and development of the thermoelectric conversion devices using it
| Project/Area Number |
15K06443
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Doshisha University |
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Principal Investigator |
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| Research Collaborator |
KITANI Ryosuke
SHIMOZONO Kosuke
TANIMOTO Shungo
SATO Yuuki
OHACHI Tadashi
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Keywords | 熱電変換素子 / ゼーベック係数 / メカニカルアロイング / 導電率 / ホール効果 / 伝導種の同定 / エピタキシャル成長 / Siの固容体 |
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| Outline of Final Research Achievements |
Silicon (Si) was added for the purpose of improvement in an Seebeck coefficient to molybdenum silicide (MoSi2), and MoSiX thin film (2.00≦X≦.60) were deposited by the rf magnetron sputtering. Crystal structure analysis, construction of Hall effect measurement equipment, measurements of temperature dependencies of the both electrical conductivity and Hall effect measurement equipment, measurement of an Seebeck coefficient, and observation of microstructure were executed and the following things were clarified. Si is dissolved into a crystal for X≦2.30. The epitaxial film with (110) plane could be deposited on c plane of a sapphire substrate. The Seebeck coefficient increased with increasing X. The conduction species could be assigned. The conduction mechanism were proposed. The possibility of synthesis of quasi stable beta phase was suggested by shearing friction by mechanical alloying.
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| Free Research Field |
電気電子材料
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