A proposal for electrode formation at low annealing temperatures via the application of femtosecond-laser-induced modifications on silicon carbide

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K06466
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Composite materials/Surface and interface engineering
• Research Institution: The University of Tokushima
• Principal Investigator: OKADA Tatsuya 徳島大学, 大学院社会産業理工学研究部(理工学域), 教授 (20281165)
• Co-Investigator(Renkei-kenkyūsha): TOMITA Takuro 徳島大学, 大学院社会産業理工学研究部(理工学域), 准教授 (90359547)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: シリコンカーバイド / フェムト秒レーザー

Outline of Final Research Achievements

Modifications were introduced on the surface of silicon carbide (SiC) by the irradiation of femtosecond laser. A thin nickel (Ni) film was deposited on the modified SiC surface and subsequently annealed. At the annealing temperature of 673 K, femtosecond laser-induced modifications enhanced the catalytic action of Ni to dissolve the atomic bonding of SiC. It was found that the inter-diffusion between Ni and Si was also promoted, forming Ni-silicide at the Ni/SiC interface. Comparing with the conventional annealing process at 1173 K or higher temperatures to form Ni electrode on SiC, the present results show the possibility to dramatically reduce the annealing temperature in the electrode forming process.

Free Research Field

材料科学