Role of Monovalent Copper Ion in Embedding Copper Damascene Wiring Pore

2018 Fiscal Year Final Research Report

• Project/Area Number: 15K06511
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Material processing/Microstructural control engineering
• Research Institution: Osaka Prefecture University
• Principal Investigator: Kondo Kazuo 大阪府立大学, 研究推進機構, 客員研究員 (50250478)
• Co-Investigator(Kenkyū-buntansha): 金子 豊 京都大学, 情報学研究科, 助教 (00169583) ; 齊藤 丈靖 大阪府立大学, 工学(系)研究科(研究院), 准教授 (70274503) ; 横井 昌幸 大阪府立大学, 工学(系)研究科(研究院), 研究員 (80359348)
• Research Collaborator: Kaneko Yutaka ; Saito Takeyasu ; Yokoi Masayuki ; Hayashi Taro
• Project Period (FY): 2015-04-01 – 2019-03-31
• Keywords: TSV / 一価銅 / 穴埋めっき

Outline of Final Research Achievements

1. The through silicon via (TSV), which has a generally rectangular shape, is tapered to form a V-shape. The time required for copper hole plating for 12 hours was reduced to 3 minutes. From the analysis of computational fluid dynamics of exfoliation vortices, there is an accelerated complex of Cu (I) Thiolae accumulated at the TSV bottom. 2. In the numerical reaction analysis of COMSOL, the additive model of hole-filling copper plating was numerically analyzed using the fact that the reduction reaction of copper is a two-step reaction that passes monovalent copper. The promoting action of monovalent copper, chlorine and SPS is proved from numerical reaction analysis. 3. The monovalent copper was generated by dissolving the copper plating of the disk and the monovalent copper was sent to the ring. The ring oxidation current in this state increased in proportion to the amount of SPS in the bath.

Free Research Field

化学工学

Academic Significance and Societal Importance of the Research Achievements

従来12時間要の銅穴埋めっきを3分に時間短縮した。また30秒に短縮した。これで高価なウエハーめっき装置の台数がヘリ、革新的なコストダウンが図れる。
回転リングーデイスクのリング酸化電流は浴中のSPS量と比例して増大した。これを用いて今後は添加剤のモニターに結び付ける。