2017 Fiscal Year Final Research Report
Influence of charge delocalization in nanofabrication induced by ionizing radiations
| Project/Area Number |
15K06662
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Nuclear engineering
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| Research Institution | Hokkaido University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
KOZAWA Takahiro 大阪大学, 産業科学研究所, 教授 (20251374)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Keywords | 放射線化学 / レジスト / パルスラジオリシス / 電子線 / 極端紫外線（ＥＵＶ） / 半導体超微細化 / ラジカルイオン |
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| Outline of Final Research Achievements |
Extreme-ultraviolet (EUV) lithography has attracted attention as the most up-to-date semiconductor mass production technology using an ionizing radiation. In the resist material, the radiation chemical reaction is induced by ionization after the exposure and then the solubility in the developer is changed. Although the dynamics of charges in the resist after ionization is important for nanolithography, details have been not yet clarified. In this study, we tried to clarify the behavior of excess charges in the aromatic molecule which is the main component of the resist by using the electron beam pulse radiolysis method etc. We also proposed a new method to improve resist performance.
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| Free Research Field |
放射線化学
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