Aharonov-Bohm effect in optically functional Type-I semiconductor quantum structures

2016 Fiscal Year Final Research Report

• Project/Area Number: 15K13267
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Nanostructural physics
• Research Institution: Hokkaido University
• Principal Investigator: Murayama Akihiro 北海道大学, 情報科学研究科, 教授 (00333906)
• Project Period (FY): 2015-04-01 – 2017-03-31
• Keywords: 半導体量子ドット / アハラノフボーム効果 / GaAs量子リング / 発光スペクトル磁場依存性

Outline of Final Research Achievements

We study the Aharonov-Bohm (AB) effect, that is an interference phenomenon caused by coherent phase difference of electron- and hole-wavefunctions, in Type-I semiconductor quantum dots (QDs) suitable for optical device applications. Optical detection of the AB effect has been limited to core-shell type-II QDs so far. Therefore, we aimed to obtain knowledge about the AB effect in the Type-I QDs by using quantum ring samples combining type-I GaAs QDs grown by droplet epitaxy, utilizing the one-dimensional nature of the wavefunctions in the ring direction. Magnetic-field dependences of the emission spectrum from a single quantum ring are measured by micro-photoluminescence spectroscopy under magnetic fields up to 5 T, and investigations are conducted in consideration of the Zeeman shift induced by the magnetic field.

Free Research Field

光機能量子ドット