Low-temperature crystal growth/connection of metal-oxide nanocrystals toward printed electronics

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K13280
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Nanomaterials chemistry
• Research Institution: Yamagata University
• Principal Investigator: KURIHARA MASATO 山形大学, 理学部, 教授 (50292826)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 無機半導体 / 金属酸化物 / 金属ハライド / 低温・溶液プロセス

Outline of Final Research Achievements

Perovskite solar cells have drastically progressed with respect to the photocurrent quantum efficiencies of more than 20%. Moreover, the perovskite layers have been advantageously prepared via low-temperature solution processes. Toward all solution-processed solar cells, solution-processed n- and p-type inorganic semiconductor thin-films controlled by nanometer thickness become a crucial key technology. In this study, mechanism on the low-temperature (150°C) crystal growth/interfacial connection of ZnO (n-type semiconductor) nanocrystals using a low-temperature flux has been elucidated. Crack and void-less nano-films of CuI and CuSCN (p-type semiconductor) have been successfully fabricated via a low-temperature (150°C) solution process. In this process, alcohol solvents are utilized to prepare the precursor solutions of CuI and CuSCN.

Free Research Field

ナノ材料化学