Integration of silicon photonic devices operating various wavelength bands

2016 Fiscal Year Final Research Report

• Project/Area Number: 15K13326
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Nano/Microsystems
• Research Institution: Osaka Prefecture University
• Principal Investigator: Takahashi Yasushi 大阪府立大学, 工学(系)研究科(研究院), 准教授 (20512809)
• Research Collaborator: NODA SUSUMU 京都大学, 工学研究科, 教授 (10208358) ; ASANO TAKASHI 京都大学, 工学研究科, 准教授 (30332729)
• Project Period (FY): 2015-04-01 – 2017-03-31
• Keywords: シリコンフォトニクス / 微細加工 / 高Q値ナノ共振器 / シリコンラマンレーザー

Outline of Final Research Achievements

In this research, we challenged to fabricate a silicon-on-insulator (SOI) substrate with different thicknesses and to integrate the silicon photonics devices which operate with different wavelength bands.
In the first year, we developed a new process for thinning the silicon substrate with sub-nanometer precision. Subsequently, we fabricated a silicon substrate having different thicknesses.
In the second year, we fabricated two high-Q nanocavities on a SOI chip, which operate in the 1310 nm and 1550 nm bands. We achieved the Q values more than 2 million in both nanocavities. Furthermore, we succeeded in fabricating the two Raman silicon lasers on the chip, which worked in the 1310 nm and 1550 nm bands. This achievement is above the initial plan. The Q value of 2 million is difficult to achieve even with a single chip, and the Raman silicon laser is the most difficult device to fabricate. We will conduct the industrial transfer of these technologies.

Free Research Field

半導体光デバイス