Exploration of novel materials hosting post-graphene atomic layers by high-pressure synthesis and electrochemical intercalation

2016 Fiscal Year Final Research Report

• Project/Area Number: 15K13332
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Applied materials
• Research Institution: Osaka University
• Principal Investigator: Sakai Hideaki 大阪大学, 理学研究科, 准教授 (20534598)
• Project Period (FY): 2015-04-01 – 2017-03-31
• Keywords: 黒リン / 遷移金属ダイカルコゲナイド / 高圧合成 / インターカレーション / ディラック電子系

Outline of Final Research Achievements

To explore the post-graphene materials, we have synthesised several new materials hosting functional conducting layers, such as honeycomb and square nets, by utilising a high-pressure synthesis method. We have succeeded in carrier doping in black phosphorus that consists of the stacking of phosphorus honeycomb sheets (phosphorene), by substituting phosphorus with germanium and silicon. We have also synthesised a transition metal dichalcogenide with the polar layer stacking and a new layered magnet hosting quasi 2D Dirac fermions on the bismuth square net. Furthermore, aiming at wide-range carrier doping in the newly-developed post-graphene materials, we have performed electrochemical intercalation of organic molecules. We focused on a transition metal dichalcogenide as a first target, and have successfully optimised its thermoelectric figure of merit by enhancing thermoelectric power factor and reducing the thermal conductivity.

Free Research Field

物性物理学