2016 Fiscal Year Final Research Report
Realization of high-power and high-efficiency light-emitting devices based on AlInN
Project/Area Number |
15K13344
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Research Category |
Grant-in-Aid for Challenging Exploratory Research
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Allocation Type | Multi-year Fund |
Research Field |
Crystal engineering
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Research Institution | Tohoku University |
Principal Investigator |
Kojima Kazunobu 東北大学, 多元物質科学研究所, 准教授 (30534250)
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Project Period (FY) |
2015-04-01 – 2017-03-31
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Keywords | AlInN / 深紫外光源 / 非極性面 |
Outline of Final Research Achievements |
Structural and optical characterization were performed for thin m-plane AlInN epitaxial nanostructures grown by metalorganic vapor phase epitaxy. Crystal qualities of AlInN were remarkably improved via coherent growth on a low defect density m-plane freestanding GaN substrate prepared by hydride vapor phase epitaxy. All the epilayers unexceptionally suffer from uniaxial or biaxial anisotropic in-plane stress. However, full-width at half-maximum values of the x-ray x-rocking curves were nearly unchanged as the underlayer values being 80 ~ 150 arcsec. Applying the m-plane AlInN epitaxial nanostructures, planar vacuum fluorescent display devices emitting polarized DUV, blue, and green light were demonstrated.
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Free Research Field |
半導体光物性
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