2017 Fiscal Year Final Research Report
Study on THz light source using quantum interference in phonon system
Project/Area Number |
15K13345
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Research Category |
Grant-in-Aid for Challenging Exploratory Research
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Allocation Type | Multi-year Fund |
Research Field |
Crystal engineering
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Research Institution | Chiba University |
Principal Investigator |
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Co-Investigator(Renkei-kenkyūsha) |
MORITA KEN 千葉大学, 大学院工学研究院, 准教授 (30448344)
MA BEI 千葉大学, 大学院工学研究院, 助教 (90718420)
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Project Period (FY) |
2015-04-01 – 2018-03-31
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Keywords | LOフォノン / THz発光 / 界面フォノンポラリトン / THz吸収 / 量子干渉 |
Outline of Final Research Achievements |
The research theme is the THz emission resonating with LO phonon or LO phonon-plasmon coupling modes and the control of optical absorption by using quantum interferences in the frequency region where the lasing in continuous mode at temperatures higher than room temperature is difficult for former devices and the electromagnetic transparency to obtain optical gain at the frequency region. It has been found that the electric dipoles resonating with LO phonon are generated in the metal/semiconductor stripe structures on the surface for various materials. The emission at approximately 280/cm and with the width of 13/cm has been obtained for GaAs. The control of optical absorption by the quantum interference in the system consisting of 2 LO modes and intervalence band transition has been found for p-GaInP. These results reveals that the ultra low threshold lasing is possible using LO phonon system.
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Free Research Field |
半導体光物性
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