Mid-infrared exciton control based on low-dimensional image charge effects in narrow-gap semiconductors

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K13348
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Crystal engineering
• Research Institution: Japan Advanced Institute of Science and Technology
• Principal Investigator: Suzuki Toshi-kazu 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 教授 (80362028)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 狭ギャップ半導体 / 低次元系 / クーロン相互作用 / 固定電荷

Outline of Final Research Achievements

We fabricated and investigated InAs/low-k structures, where high-quality InAs thin films are bonded on host low-dielectric-constant (low-k) flexible substrates. From low-frequency noise measurements of the InAs/low-k, we found that the relevant length of Coulomb interaction is ~ 20 nm for electrons in the InAs. We also fabricated and investigated InAs/high-k/low-k structures, where high-k insulator layers are inserted between the InAs and the low-k. As a result, it is found that the InAs/high-k/low-k can suppress interface fluctuation scattering of electrons, whereas Coulomb scattering is enhanced by unintentional interface fixed charges.

Free Research Field

化合物半導体エレクトロニクス