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2016 Fiscal Year Final Research Report

Growth of high quality graphene using wafer bonding and high-frequency devices based on a new principle

Research Project

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Project/Area Number 15K13353
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Thin film/Surface and interfacial physical properties
Research InstitutionTohoku University

Principal Investigator

Fukidome Hirokazu  東北大学, 電気通信研究所, 准教授 (10342841)

Project Period (FY) 2015-04-01 – 2017-03-31
Keywordsグラフェン / 結晶成長 / 電界効果トランジスタ
Outline of Final Research Achievements

Excellent physical properties of graphene enables to realize transistors operating at terahertz frequencies. I have succeeded in growing high-quality graphene on substrates suitable for device application by using fabrication method of singlecrystalline SiC thin film that was separated from SiC single bulk crystal and bonded with the subtrates suitable for device applications.Graphene thus formed exhibits a linearity of band dispersions and high carrier mobility. Furthermore, I have succeeded in fabricating transistors using graphene thus formed, and showed that it is suitable for high-speed electronic device applications.

Free Research Field

表面科学、結晶工学、半導体工学

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Published: 2018-03-22  

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