Surface melting of solid hydrogen studied by cryo-TOF-SIMS

2015 Fiscal Year Final Research Report

• Project/Area Number: 15K13366
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: National Institute for Materials Science
• Principal Investigator: SUZUKI Taku 国立研究開発法人物質・材料研究機構, 光・電子材料ユニット, 主幹研究員 (60354354)
• Project Period (FY): 2015-04-01 – 2016-03-31
• Keywords: 表面相転移 / ２次イオン質量分析

Outline of Final Research Achievements

The cryostat was developed on the basis of a GM refrigerator to investigate the surface melting of a solid hydrogen (H2) film by time-of-flight secondary ion mass spectrometry (TOF-SIMS). As a result of those development, a new sample cooling manipulator was successfully developed, by which a sample can be flashed for surface cleaning in UHV. The newly developed sample manipulator was used in temperature programmed TOF-SIMS measurements on a solid hydrogen film. We found that the remarkable variation of the secondary ion emission occurs due to the re-crystallization and the melting on the topmost surface. Thus, TOF-SIMS may be applied to analyze the phase transition on solid surfaces.

Free Research Field

イオンビーム表面分析