2017 Fiscal Year Final Research Report
production of quantum bit using highly charged ions
Project/Area Number |
15K13409
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Research Category |
Grant-in-Aid for Challenging Exploratory Research
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Allocation Type | Multi-year Fund |
Research Field |
Quantum beam science
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Research Institution | Kobe University |
Principal Investigator |
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Project Period (FY) |
2015-04-01 – 2018-03-31
|
Keywords | 多価イオン / 量子ビット / 内部エネルギー / 単一イオン注入 / 走査トンネル顕微鏡 |
Outline of Final Research Achievements |
By virtue of its potential energy, the implantation event of single ion can be detected with 100% probability if a highly charged ion (HCI) is injected into a surface. In the present study, utilizing the unique property of HCI for single ion implantation technique (SII), we set the objective for realization of technique to inject single ion with high reliability and accuracy, and to produce quantum bit using ion beam technology. As the first step of the research, we developed a new positioning system of HCI injection on a surface, which makes it possible to perform ion injection and observation of scanning tunneling microscopy in an identical vacuum system.
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Free Research Field |
表面物理学
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