2017 Fiscal Year Final Research Report
Development of an evaluation method of space radiation effects on semiconductor devices using laser acceleration charged-particles
| Project/Area Number |
15K13410
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Quantum beam science
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| Research Institution | Kyushu University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
SAKAKI Hironao 量子科学技術研究開発機構, 量子ビーム科学研究部門, 上席研究員 (00354746)
NISHIUCHI Mamiko 量子科学技術研究開発機構, 量子ビーム科学研究部門, 上席研究員 (70391315)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Keywords | レーザー駆動イオン加速 / 宇宙線環境 / 半導体デバイス / 照射効果 / トムソンパラボラ分光器 / イメージングプレート / 機械学習 / 粒子・重イオン輸送シミュレーション |
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| Outline of Final Research Achievements |
In order to apply multiple charged-particles generated by laser acceleration to the study of radiation effects on space electronics, we have developed a measuring system of laser accelerated ions and a simulation method of irradiation effects on semiconductor devices. A Thomson parabola imaging spectrometer with Fujifilm imaging plates (IPs) was designed and developed for the diagnosis of laser accelerated charge particles. The spectrometer was used to measure the energy spectra of generated ions from a laser irradiated solid target at the J-KAREN-P laser facility in Kansai Photon Science Institute. For the IP image data analysis, an automatic ion-identification method with a machine learning technique was newly developed and successfully applied. Moreover, it was demonstrated that the proposed method of simulating irradiation effects on semiconductor devices with the PHITS code is applicable to the estimation of proton-induced single-event upset rates in memory devices.
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| Free Research Field |
量子ビーム科学
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