Fabrication of atomic layer devices and control of their electronic properties using soft materials

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K13497
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Condensed matter physics I
• Research Institution: Yokohama National University
• Principal Investigator: SHIMAZU Yoshihiro 横浜国立大学, 大学院工学研究院, 准教授 (70235612)
• Co-Investigator(Renkei-kenkyūsha): SUZUKI Kazuya 横浜国立大学, 大学院工学研究院, 教授 (80206466) ; SHIRASAKI Ryoen 横浜国立大学, 大学院工学研究院, 准教授 (90251751)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 層状半導体 / 2次元物質 / 電界効果 / 2硫化モリブデン / 遷移金属ダイカルコゲナイド / 電界効果トランジスタ

Outline of Final Research Achievements

Microfabrication for conventional semiconducting devices using Si, which is now approaching < 10 nm scale, are facing severe limit. To realize much smaller devices, development of novel devices using atomically thin materials that have thicknesses less than several nm is highly desirable. We fabricated small devices using atomically thin materials such as molybdenum disulfide (MoS2), and studied their transport characteristics. We demonstrated the effectiveness of gel sheet, which is a typical soft material, in the fabrication process of the devices. Experimentally we clarified the effects of environmental gas and electrode metals on the transport properties of field effect transistors using MoS2 as a channel material. We also synthesized several novel layered materials and exhibited the applicability of the materials for electronic devices.

Free Research Field

微小半導体・超伝導デバイスの物理の実験的研究