Pulse power application of SiC power devices with ultra-low loss and high switching speed

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K13927
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Power engineering/Power conversion/Electric machinery
• Research Institution: University of Yamanashi
• Principal Investigator: YANO Koji 山梨大学, 大学院総合研究部, 教授 (90252014)
• Co-Investigator(Kenkyū-buntansha): 山本 真幸 山梨大学, 大学院総合研究部, 助教 (00511320)
• Co-Investigator(Renkei-kenkyūsha): TANAKA Yasunori 産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 総括研究主幹 (20357453) ; YATSUO Tsutomu 産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 非常勤研究員 (10399503)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: パワーデバイス / パルスパワー / SiC

Outline of Final Research Achievements

The SiC-buried gate static induction transistor (SiC-BGSIT) was investigated for a switching device in a pulse power generator, and then device simulations made clear its electrical properties in an inductive energy storage circuit as a result of an optimum design of the BGSIT structure. It was made clear than the power loss per pulse can be reduced by 75% when the loss of the SiC-BGSIT is compared with that of the Si-static induction thyristor (SIThy). This effect can successfully contribute to the reduction of the size of the pulse generator.
In order to improve the performance of the SIC-BGSIT, the SiC screen grid vertical JFET, in which the screed grid regions are introduced underneath the buried p+ gate stripes of the BGSIT, was proposed. It was experimentally demonstrated that 3A-1,2kV SGVJFETs have a fall time less than 50ns during the turnoff period.This result suggests that the SGVJFET structure enhances the dV/dt in the voltage pulse.

Free Research Field

半導体工学