Exploration of giant spin Hall effect in oxides for spin current detectors

2016 Fiscal Year Final Research Report

• Project/Area Number: 15K13949
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Tohoku University
• Principal Investigator: Fujiwara Kohei 東北大学, 金属材料研究所, 講師 (50525855)
• Project Period (FY): 2015-04-01 – 2017-03-31
• Keywords: スピン軌道相互作用 / 電界効果トランジスタ

Outline of Final Research Achievements

Devices based on dissipation-less spin currents have been attracting much attention as key components in next-generation electronics. To incorporate these devices into existing electronics, electrical generation and detection of spin currents are essential. In this work, we focused on inverse spin Hall effect, which converts spin current into electric current (voltage) via spin-orbit coupling induced scattering. We prepared epitaxial thin films of a heavy element based conductive oxide and characterized their transport properties. Also, we fabricated a high-k oxide/polymer hybrid gate dielectric for field-effect control of surface conduction in insulating oxides and demonstrated its superior carrier doping properties for oxide materials.

Free Research Field

酸化物エレクトロニクス